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| KST42/43 KST42/43 High Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage : KST42 : KST43 VCEO Collector-Emitter Voltage : KST42 : KST43 VEBO IC PC TSTG RTH(j-a) Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient 300 200 6 500 350 150 357 V V V mA mW C C/W 300 200 V V Value Units Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO Parameter Collector-Emitter Breakdown Voltage : KST42 : KST43 * Collector -Emitter Breakdown Voltage : KST42 : KST43 Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC=100A, IE=0 Min. 300 200 IC=1mA, IB=0 300 200 IE=100A, IC=0 VCB=200V, IE=0 VCB=5V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA IC=20mA, IB=2mA IC=20mA, IB=2mA VCB=20V, IE=0 f=1MHz VCE=20V, IC=10mA f=100MHz 50 25 40 40 0.5 0.9 3 4 V V pF pF MHz 6 0.1 0.1 V V V A A Max. Units V V BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) Cob * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance : KST42 : KST43 fT Current Gain Bandwidth Product * Pulse Test: PW300s, Duty Cycle2% (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST42/43 Marking Code Type Mark KST42 1D Marking KST43 1E 1D (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST42/43 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 IC = 10 IB hFE, DC CURRENT GAIN VCE = 10V 1 VBE(sat) 100 0.1 VCE(sat) 10 1 10 100 0.01 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 100 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT IE = 0 f = 1MHz 120 100 Ccb [pF], CAPACITANCE VCE = 20V 80 10 60 40 20 1 0.1 0 1 10 100 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST42/43 Package Dimensions SOT-23 0.20 MIN 2.40 0.10 0.40 0.03 1.30 0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 0.03 0.96~1.14 2.90 0.10 0.12 -0.023 +0.05 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF 0.97REF Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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