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E2Q0010-27-X2 electronic components This version: Jan. 1998 Previous version: Jun. 1996 KGF1145 electronic components KGF1145 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1145 is a two-stage small-signal UHF-band amplifier that features low current operation, high output power, and high isolation. The KGF1145 specifications are guaranteed to a fixed matching circuit for 5 V and 850 MHz; external impedance-matching circuits are also required. Because of the high isolation, the KGF1145 is an ideal part for VCO-buffer amplifiers and intermediate stage amplifiers for portable handy phones, such as cellular phones. FEATURES * Low current operation: 4 mA (max.) * High output power: 2 dBm (min.) * High isolation: -40 dB * Self-bias circuit configuration with built-in source capacitor * Package: 4PSOP PACKAGE DIMENSIONS 1.80.1 0.850.05 0.6 +0.1 -0.05 0.4 +0.1 -0.05 1.10.15 0.36 0.74 3.00.2 1.50.15 0.3 MIN 0 to 0.15 Package material 1.90.1 2.80.15 Lead frame material 0.125 +0.03 -0 Epoxy resin 42 alloy Solder plating 5 mm or more Pin treatment Solder plate thickness (Unit: mm) 1/7 electronic components KGF1145 MARKING (4) (3) BXX (1) (2) NUMERICAL NUMERICAL PRODUCT TYPE LOT NUMBER (1) Gate (2) Source (3) Drain (4) GND CIRCUIT D (3) (1) G S (2) 100 pF (4) GND APPLICATION EXAMPLE FOR PORTABLE PHONES Transmission system intermediate frequency KGF1165 KGF1145/46 VCO GaAs device KGF1305 KGF1254/56 Antenna Power amplifier Driver amplifier SAW filter Wide-band amplifier KGL2115 Buffer amplifier. Oscillator Divider 1 n Prescaler Prescaler Divider 1 n Filter Filter Duplexer KGL2115 KGF1175 KGF1155 Mixer amplifier Buffer amplifier. Oscillator VCO Head amplifier SAW filter Receiving system intermediate frequency KGF1145/46 2/7 electronic components KGF1145 ABSOLUTE MAXIMUM RATINGS Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Unit V V mA mW C C Min. -- -3 -- -- -- -45 (Ta = 25C) Max. 6 0.4 60 200 150 125 ELECTRICAL CHARACTERISTICS (Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Operating current Gate-source cut-off voltage Transconductance Output power Isolation Symbol IGSS IGDO IDS(off) IDSS ID VGS(off) gm PO ISO Condition VGS = -3 V VGDO = -6 V VDS = 3 V, VGS = -2.5 V VDS = 3 V, VGS = 0 V (*1), PIN = -10 dBm VDS = 3 V, IDS = 120 mA VDS = 3 V, IDS = 2.5 mA (*1), PIN = -10 dBm (*1), PIN = -10 dBm Unit mA mA mA mA mA V mS dBm dB Min. -- -- -- 15 -- -2.0 8 2 40 Max. 12 60 120 -- 4 -1.0 -- -- -- *1 Self-bias condition: VDD = 5.0 0.25 V, VG = 0 V, f = 850 MHz 3/7 electronic components KGF1145 CHARACTERISTICS Po vs. PIN 10 5 4 0 3 -10 2 -20 VDD =4.75 V f=850 MHz -30 -40 1 -30 -20 -10 0 0 Input Power PIN (dBm) Operating Current ID (mA) Output Power Po (dBm) 4/7 electronic components Typical S Parameters KGF1145 VDD = 5 V, ID = 2.70 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 1.019 1.014 1.004 0.997 0.989 0.979 0.970 0.958 0.949 0.936 0.926 0.914 0.903 0.889 0.882 0.867 0.856 0.849 0.840 0.829 0.820 0.807 0.798 0.783 0.779 0.765 -13.30 -15.83 -18.55 -21.19 -23.73 -26.33 -28.86 -31.41 -33.99 -36.74 -39.31 -42.03 -44.77 -47.30 -49.93 -52.61 -55.68 -58.49 -61.23 -64.11 -66.28 -69.20 -72.04 -75.15 -78.39 -81.35 4.379 4.408 4.273 4.200 4.021 3.914 3.594 3.432 3.195 3.019 2.806 2.627 2.427 2.318 2.232 2.170 2.118 2.017 1.954 1.903 1.846 1.781 1.748 1.705 1.670 1.609 -47.41 -59.30 -70.90 -79.69 -88.70 -96.04 -103.81 -109.87 -115.80 -120.72 -126.82 -131.34 -135.76 -141.70 -146.80 -151.72 -156.73 -162.05 -167.23 -172.08 -176.86 178.08 172.95 168.29 163.69 158.74 0.002 0.001 0.002 0.001 0.002 0.001 0.002 0.002 0.003 0.001 0.001 0.001 0.000 0.001 0.003 0.003 0.004 0.006 0.006 0.010 0.011 0.012 0.015 0.019 0.024 0.029 68.37 68.30 76.00 103.87 70.31 41.49 39.66 69.82 40.98 91.26 106.35 87.82 36.68 -107.00 -120.41 -119.09 -120.95 -127.04 -118.02 -117.98 -118.51 -121.43 -125.86 -127.35 -123.08 -127.91 0.922 0.921 0.920 0.918 0.918 0.912 0.913 0.910 0.909 0.901 0.901 0.898 0.895 0.889 0.888 0.881 0.878 0.875 0.870 0.867 0.864 0.863 0.856 0.857 0.850 0.852 -7.57 -8.97 -10.50 -11.77 -13.39 -14.69 -16.08 -17.60 -18.98 -20.60 -21.77 -23.04 -24.52 -25.91 -26.97 -28.24 -29.59 -30.86 -32.08 -33.30 -34.57 -35.57 -36.57 -37.71 -38.64 -39.54 5/7 electronic components Typical S Parameters KGF1145 VDD = 5 V, ID = 2.70 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W j1.0 j0.5 j2.0 135 j0.2 j5.0 3.0 0.5 S22 0.5 3.0 S11 3.0 0.0 0.2 0.5 1.0 2.0 5.0 3.0 S21 0.5 180 5.0 4.0 3.0 2.0 90 45 0.5 1.0 0.01 0.02 0.03 0.04 0.05 0 S12 6/7 electronic components Test Circuit for KGF1145 KGF1145 L1 L2 L2 L1 IN Cc W1 W1 Cc OUT W2 L3 C1 C2 L3 W2 Cc Vd L1 = 20 mm L2 = 8 mm L3 = 10 mm W1 = 1 mm W2 = 3 mm Cc = 1000 pF C1, C2: Trimmer capacitor (Murata Giga-trimmer, max. 4.5 pF) Substrate parameters er = 2.6 h = 1.6 mm C1 and C2 are tuned to obtain maximum output power. 7/7 |
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