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| FDS7088N3 February 2004 FDS7088N3 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features * 21 A, 30 V RDS(ON) = 4 m @ VGS = 10 V RDS(ON) = 5 m @ VGS = 4.5 V * High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Fast switching * FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications * Synchronous rectifier * DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 20 (Note 1a) Units V A W C 21 60 3.0 1.5 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.5 C/W Package Marking and Ordering Information Device Marking FDS7088N3 2004 Fairchild Semiconductor Corporation Device FDS7088N3 Reel Size 13'' Tape width 12mm Quantity 2500 units FDS7088N3 Rev D1 (W) FDS7088N3 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions ID = 250 A VGS = 0 V, ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V Min 30 Typ Max Units V Off Characteristics 25 10 100 1 1.9 -6 3.0 3.7 4.4 112 3845 930 368 VGS = 15 mV, (Note 2) mV/C A nA V mV/C 4 5 5.5 m On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 10 V, ID = 21 A ID = 19 A VGS = 4.5 V, VGS = 10 V, ID = 21 A, TJ = 125C VDS = 10 V, ID = 21 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, 3 gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr S pF pF pF 27 23 99 58 48 ns ns ns ns nC nC nC 2.5 A V nS nC Dynamic Characteristics f = 1.0 MHz ID = 1 A, RGEN = 6 1.4 15 13 62 36 Switching Characteristics VDD = 15 V, VGS = 10 V, VDS = 15 V, VGS = 5.0 V ID = 21 A, 37 10 14 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.5 A Voltage IF = 21 A, Diode Reverse Recovery Time diF/dt = 100 A/s Diode Reverse Recovery Charge (Note 2) 0.7 39 33 1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 40C/W when 2 mounted on a 1in pad of 2 oz copper b) 85C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS7088N3 Rev D1 (W) FDS7088N3 Typical Characteristics 80 VGS = 10V 4.5V 2.2 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5V VGS = 3.5V 2 1.8 1.6 1.4 1.2 1 0.8 0 20 40 ID, DRAIN CURRENT (A) 60 80 ID, DRAIN CURRENT (A) 60 40 4.0V 4.5V 5.0V 6.0V 10V 20 3.0V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.01 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 21A VGS = 10V ID = 10.5A 0.008 1.4 1.2 0.006 TA = 125oC 1 0.004 TA = 25oC 0.002 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 80 VDS = 5V ID, DRAIN CURRENT (A) 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC -55oC 40 TA =125oC 25oC 20 -55oC 0 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7088N3 Rev D1 (W) FDS7088N3 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 21A 8 20V 6 CAPACITANCE (pF) VDS = 10V 15V 5000 f = 1MHz VGS = 0 V CISS 4000 3000 4 2000 COSS 1000 CRSS 2 0 0 20 40 Qg, GATE CHARGE (nC) 60 80 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC 100s 40 SINGLE PULSE RJA = 85C/W TA = 25C 10 30 1 0.1 VGS = 10V SINGLE PULSE RJA = 85oC/W TA = 25oC 20 10 0.01 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1.00 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.10 0.1 0.05 0.02 RJA(t) = r(t) * RJA RJA = 85 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.01 SINGLE PULSE 0.00 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDS7088N3 Rev D1 (W) FDS7088N3 Dimensional Outline and Pad Layout FDS7088N3 Rev D1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I8 |
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