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 Philips Semiconductors
Product specification
Damper diode fast, high-voltage
FEATURES
* Low forward volt drop * Fast switching * Soft recovery characteristic * High thermal cycling performance * Isolated mounting tab
BY459X-1500, BY459X-1500S
SYMBOL
QUICK REFERENCE DATA
VR = 1500 V VF 1.2 V / 1.25 V IF(peak) = 12 A (f = 48 kHz) IF(peak) = 10 A (f = 82 kHz) IFSM 100 A trr 350 ns / 220 ns
k 1
a 2
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diode featuring fast forward recovery and low forward recovery voltage. The device is intended for use in HDTV receivers and multi-sync monitor horizontal deflection circuits. The BY459X series is supplied in the conventional leaded SOD113 package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode isolated
SOD113
case
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRSM VRRM VRWM IF(peak) IFRM IF(RMS) IFSM Peak non repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Peak working forward current Peak repetitive forward current RMS forward current Peak non-repetitive forward current Storage temperature Operating junction temperature f = 48 kHz; f = 82 kHz; t = 100 s t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 C prior to surge; with reapplied VRWM(max) CONDITIONS MIN. -40 MAX. 1500 1500 1300 -1500 12 -1500S 10 100 30 100 110 150 150 UNIT V V V A A A A A A C C
Tstg Tj
November 2002
1
Rev 2.000
Philips Semiconductors
Product specification
Damper diode fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from both terminals to external heatsink CONDITIONS
BY459X-1500, BY459X-1500S
MIN. -
TYP.
MAX. 2500
UNIT V
f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree
Cisol
Capacitance from both terminals f = 1 MHz to external heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air. MIN. TYP. 55 MAX. 4.8 5.9 UNIT K/W K/W K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL PARAMETER VF IR Forward voltage Reverse current CONDITIONS IF = 6.5 A IF = 6.5 A; Tj = 125 C VR = 1300 V VR = 1300 V; Tj = 125 C TYP. 0.95 0.85 1.05 0.95 MAX. 1.30 1.20 250 1 1.35 1.25 250 1 UNIT V V A mA BY459X- 1500 1500S 1500 1500S
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL PARAMETER trr Qs Vfr tfr Reverse recovery time Reverse recovery charge Peak forward recovery voltage Forward recovery time CONDITIONS IF = 1 A, VR 30 V; IF = 2 A, -dIF/dt = 20 A/s IF = 6.5A, dIF/dt = 50A/s IF = 6.5A, dIF/dt = 50A/s TYP. BY459X- 1500 1500S 0.25 2.0 8.0 170 0.17 0.70 11.0 200 MAX. 1500 0.35 3.0 14.0 250 1500S 0.22 0.95 19.0 300 s C V ns UNIT
November 2002
2
Rev 2.000
Philips Semiconductors
Product specification
Damper diode fast, high-voltage
BY459X-1500, BY459X-1500S
I
F
100
Maximum pulse width / us
V
BY459X-1500
VRRM
10% tfr VF V VF 5V / 2V time fr
1 10
pulse width tp
time period T
time
10
100 line frequency / kHz
Fig.1. Definition of Vfr and tfr
Fig.4. Maximum allowable pulse width tp versus line frequency; Basic horizontal deflection circuit.
I
dI F dt
F
30
IF / A Tj = 125 C Tj = 25 C
BY459
trr time
20 typ 10 max
Qs I
25%
100%
R
0 0 0.5 1 VF / V 1.5 2
Fig.2. Definition of trr and Qs
Fig.5. BY459X-1500 Typical and maximum forward characteristic IF = f(VF); parameter Tj
VCC
30
IF / A Tj = 125 C Tj = 25 C
BY459S
Line output transformer LY
20
typ 10
max
Cf deflection transistor D1
Cs
0
0
0.5
1
1.5
VF / V
2
Fig.3. Basic horizontal deflection circuit.
Fig.6. BY459X-1500S Typical and maximum forward characteristic IF = f(VF); parameter Tj
November 2002
3
Rev 2.000
Philips Semiconductors
Product specification
Damper diode fast, high-voltage
BY459X-1500, BY459X-1500S
10
Transient thermal impedance, Zth j-hs (K/W)
1
0.1
0.01
P D
tp
D=
tp T t
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s pulse width, tp (s) BY459F
10s
Fig.7. Transient thermal impedance Zth = f(tp)
November 2002
4
Rev 2.000
Philips Semiconductors
Product specification
Damper diode fast, high-voltage
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
A E P q A1 z
BY459X-1500, BY459X-1500S
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-leads TO-220 'full pack'
SOD113
m T
D HE
j L1
(1)
k Q
L
1 b1 b e
2 wM c
0
10 scale
20 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.1 0.9 c 0.7 0.4 D 15.8 15.2 E 10.3 9.7 e 5.08 HE max. 19.0 j 2.7 2.3 k 0.6 0.4 L 14.4 13.5 L1
(1)
m 6.5 6.3
P 3.2 3.0
Q 2.6 2.3
q 2.6
T 2.55
w 0.4
z(2) 0.8
3.3 2.8
Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. OUTLINE VERSION SOD113 REFERENCES IEC JEDEC 2-lead TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11
Fig.8. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
November 2002
5
Rev 2.000
Philips Semiconductors
Product specification
Damper diode fast, high-voltage
BY459X-1500, BY459X-1500S
DEFINITIONS
DATA SHEET STATUS DATA SHEET STATUS1 Objective data PRODUCT STATUS2 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A
Preliminary data
Qualification
Product data
Production
Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. November 2002 6 Rev 2.000


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