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| (R) STPS10L60CF POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) 2x5A 60 V 150 C 0.52 V A2 K FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP NEGLIGIBLE SWITCHING LOSSES A2 A1 K ISOWATT220AB DESCRIPTION Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in ISOWATT220AB, this device is intended for use in high frequency inverters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise reverse voltage Tc = 130C = 0.5 Per diode Per device Value 60 30 5 10 180 1 - 65 to + 175 150 10000 Unit V A A A A C C V/s tp = 10 ms Sinusoidal tp = 2 s square F = 1kHz *: dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth(j-a) July 1999 - Ed: 2A 1/4 STPS10L60CF THERMAL RESISTANCE Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 4.5 3.5 2.5 Unit C/W C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25C Tj = 125C VF * Forward voltage drop Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% To evaluate the conduction losses use the following equation : P = 0.4x IF(AV) + 0.024 IF2(RMS) IF = 5 A IF = 5 A IF = 10 A IF = 10 A 0.55 0.43 VR = VRRM 45 Min. Typ. Max. 220 60 0.55 0.52 0.67 0.64 Unit A mA V Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) = 0.05 =1 Fig. 2: Average current versus temperature (=0.5) (per diode). IF(av)(A) 6 Rth(j-a)=Rth(j-c) ambient 3.5 3.0 2.5 2.0 = 0.1 = 0.2 = 0.5 5 4 3 Rth(j-a)=15C/W 1.5 1.0 0.5 T 2 1 =tp/T T IF(av) (A) =tp/T tp tp Tamb(C) 50 75 100 125 150 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 0 25 2/4 STPS10L60CF Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) Fig. 4: Relative variation of thermal transient impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 Tc=75C = 0.2 = 0.5 90 80 70 60 50 40 30 20 10 Tc=25C T IM t Tc=125C 0.2 = 0.1 Single pulse 0 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 tp(s) 1E-2 1E-1 =tp/T tp 0.0 1E-3 1E+0 1E+1 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(mA) Fig. 6: Junction capacitance versus reverse voltage applied (typical values,per diode). C(pF) 1000 3E+2 1E+2 1E+1 1E+0 Tc=150C F=1MHz Tj=25C Tc=125C 500 Tc=100C Tc=75C 1E-1 1E-2 Tc=50C Tc=25C 200 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 45 50 55 60 100 1 VR(V) 10 100 Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Tj=150C (typical values) Tj=25C 10.0 1.0 Tj=125C VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 3/4 STPS10L60CF PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Cooling method: C Recommended torque value: 0.55 m.N Maximum torque value: 0.70 m.N Millimeters Min. Max. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 Typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 Typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 Ordering type STPS10L60CF STPS10L60CF Epoxy meets UL94,V0 Marking STPS10L60CF STPS10L60CF Package ISOWATT220AB ISOWATT220AB Weight 2.08g 2.08g Base qty 50 1000 Delivery mode Tube Bulk Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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