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APT10M25SVR 100V 75A 0.025 POWER MOS V (R) D3PAK Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. V(R) * Faster Switching * Lower Leakage * 100% Avalanche Tested * Surface Mount D3PAK Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25C Pulsed Drain Current 1 5 5 All Ratings: TC = 25C unless otherwise specified. APT10M25SVR UNIT Volts Amps 100 75 300 30 40 300 2.4 -55 to 150 300 75 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 5 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 5 MIN TYP MAX UNIT Volts Amps 100 75 0.025 250 1000 100 2 4 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5518 Rev A Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (V GS = 30V, VDS = 0V) Gate Threshold Voltage (V DS = VGS , ID = 1.0mA) APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-802 8 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street FAX: (541) 388-036 4 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT10M25SVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = 0.5 ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 4300 1600 650 150 28 75 13 22 40 10 5160 2240 975 225 42 115 26 44 60 20 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Characteristic / Test Conditions Continuous Source Current Pulsed Source Current Diode Forward Voltage 1 2 5 5 MIN TYP MAX UNIT Amps Volts ns C (Body Diode) (Body Diode) 75 300 1.3 150 1.0 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -I D[Cont.], dl S /dt = 100A/s) Reverse Recovery Charge (IS = -I D[Cont.], dl S /dt = 100A/s) Q rr THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.42 40 4 Starting T = +25C, L = 0.53mH, R = 25, Peak I = 75A j G L 5 The maximum current is limited by lead temperature. 1 Repetitive Rating: Pulse width limited by maximum T j 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 , THERMAL IMPEDANCE (C/W) D=0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.1 0.05 0.01 0.005 050-5518 Rev A Z 0.001 10-5 JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT10M25SVR 150 I , DRAIN CURRENT (AMPERES) D VGS=10V & 15V I , DRAIN CURRENT (AMPERES) D 150 V GS=15V 10V 7V 100 75 50 6.5V 6V 5.5V 5V 25 4.5V 4V 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 (ON), DRAIN-TO-SOURCE ON RESISTANCE 1.2 V GS 125 7V 100 6.5V 6V 5.5V 5V 25 4.5V 4V 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 150 T J = -55C TJ = +25C VDS> I D (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ < 0.5 % DUTY CYCLE 125 75 50 NORMALIZED TO = 10V @ 0.5 I [Cont.] D I , DRAIN CURRENT (AMPERES) D 125 1.1 VGS=10V 100 75 50 T J = +125C 1.0 0.9 VGS =20V 25 T J = +125C T J = -55C T J = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 0 80 I , DRAIN CURRENT (AMPERES) D DS R 0.8 0 25 50 75 100 125 150 ID , DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT , DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) BV 25 ID = 0.5 I D [Cont.] V = 10V 1.15 1.10 60 1.05 40 1.00 20 0.95 50 75 100 125 150 T C, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE (ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.00 0 DSS -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 0.90 -50 GS 1.75 1.1 1.0 1.50 1.25 1.00 0.9 0.8 0.7 050-5518 Rev A 0.75 DS 0.50 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 T C, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.6 -50 R APT10M25SVR 400 100S ID , DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY R DS (ON) 15,000 10,000 5,000 Coss Ciss Ciss Coss Crss 50 1mS C, CAPACITANCE (pF) IDR, REVERSE DRAIN CURRENT (AMPERES) 100 10mS 10 5 TC =+25C TJ =+150C SINGLE PULSE 100mS DC 1,000 500 1 5 10 50 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 ID = ID [Cont.] 1 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 50 TJ =+150C T J =+25C 100 16 VDS =20V VDS =50V 12 VDS=80V 8 10 5 4 50 100 150 200 250 300 Qg , TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 1 D PAK Package Outline Drain (Heat Sink) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 1.04 (.041) 1.15 (.045) Revised 4/18/95 13.79 (.543) 13.99 (.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.98 (.078) 2.08 (.082) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) 5.45 (.215) BSC {2 Plcs.} Heat Sink (Drain) and Leads are Plated 050-5518 Rev A Source Drain Gate Dimensions in Millimeters (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 |
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