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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 100 Volt VDS * RDS(on) = 0.5 * Spice model available ZVN4310A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Practical Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Practical Power Dissipation at T amb=25C* Operating and Storage Temperature Range SYMBOL V DS ID I DP I DM V GS P tot P totp T j :T stg VALUE 100 0.9 1 12 20 850 1.13 -55 to +150 UNIT V A A A V mW W C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 9 0.36 0.48 600 0.5 0.65 100 1 3 20 10 100 TYP. MAX. UNIT CONDITIONS. V V nA A A A mS I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= 20V, V DS=0V V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125C(2) V DS=25 V, V GS=10V V GS=10V,I D=3A V GS=5V, I D=1.5A V DS=25V,I D=3A g fs 3-393 ZVN4310A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. C iss C oss TYP. MAX. 350 140 UNIT pF pF V DS=25 V, V GS=0V, f=1MHz CONDITIONS. C rss t d(on) tr t d(off) tf 30 8 25 30 16 pF ns ns ns ns V DD 25V, V GEN=10V, I D=3A R GS=50 (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT C/W C/W Max Power Dissipation - (Watts) 1.0 Thermal Resistance (C/W) 150 t1 D.C. D=t1/tP 0.75 100 tP D=0.6 Am tt en bi 0.50 em pe tu ra 50 D=0.2 D=0.1 0.25 re -40 -20 0 20 40 60 80 100 120 140 160 180 200 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-394 ZVN4310A TYPICAL CHARACTERISTICS RDS(on)-Drain Source On Resistance () VGS= 20V 10V 12V 9V 8V VGS=3V 10 4V 5V 6V 8V10V 7V ID - Drain Current (Amps) 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 6V 1.0 5V 4V 3V 5 6 7 8 9 10 0.1 0.1 1 10 100 VDS - Drain Source Voltage (Volts) ID-Drain Current (Amps) Saturation Characteristics On-resistance v drain current 2.6 Normalised RDS(on) and VGS(th) 2.4 5 gfs-Transconductance (S) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 sis Re e rc u So nai VGS=VDS Dr Gate ID=1mA Thres hold V oltage V e nc ta R n) (o DS VGS=10V ID=3.3A 4 3 2 1 0 0 2 4 6 8 10 VDS=10V GS(TH ) 25 50 75 100 125 150 175 200 225 12 14 16 18 20 Tj-Junction Temperature (C) ID(on)- Drain Current (Amps) Normalised RDS(on) and VGS(th) v Temperature Transconductance v drain current 16 VGS-Gate Source Voltage (Volts) 500 14 12 10 8 6 4 2 0 0 1 ID=3A C-Capacitance (pF) 400 300 200 100 0 Coss Crss 50 Ciss VDD= 10V 20V 50V 100V 0 10 20 30 40 2 3 4 5 6 7 8 9 10 11 12 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-395 |
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