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| PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5215 K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5215 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band Middle Power Amplifier (MPA) . BLOCK DIAGRAM Vg1 Vg2 FEATURES RF frequency : 27.5 to 30.0 GHz Linear gain : 13 dB P1dB : 23 dBm DC power : Vd = 5 V, Id1 + Id2 = 270 mA In Out Vd1 Vd2 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Symbol Vd1, Vd2 Vg1, Vg2 Id1 Id2 Pin Ta Tstg Tmax Parameter Drain supply voltage Gate supply voltage Drain current 1 Drain current 2 RF input power Backside ambient temp. Storage temp. Maximum assembly temp. Ratings 6 -3 ~ 0.5 120 240 16 -20 ~ +70 -65 ~ +175 +300 Units V V mA mA dBm C C C ELECTRICAL CHARACTERISTICS (Ta = 25 C) Symbol Gain VSWR in VSWR out P1dB IM3 Gain Input VSWR Output VSWR Output power at 1 dB compression point Inter modulation level Parameter Conditions Min. Vd = 5 V Id1 = 90 mA Id2 = 180 mA (RF off) f = 27.5, 30.0 GHz Single tone f = 27.5, 30.0 GHz Tow tone(10MHz off) Pout = 20 dBm 13.0 3.0 3.0 23.0 (22.0) Limits Units Typ. Max. dB dBm dBc MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5215 K-Band 2-Stage Power Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : M) 1205 460 GND GND 950 RF in GND 550 Vd1 R(Vd1) R(Vd2) GND Vd2 Vg1 Vg2 GND RF out GND 550 350 760 910 1210 1700 X Dimention 1.70 mm Y Dimention 0.95 mm MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5215 K-Band 2-Stage Power Amplifier TYPICAL CHARACTERISTICS Small Signal Performances (Vd = 5 V, Id1 = 90 mA , Id2 = 180 mA, Ta = 25 C) 20 15 10 5 0 -5 -10 -15 -20 26 28 30 32 FrequencyA@ [GHz] 34 S22 S11 S21 Output Power Performances (Vd = 5 V, Id1 = 90 mA , Id2 = 180 mA, Ta = 25 C) 30 25 20 15 10 5 -10 Pout 50 40 30 20 10 0 15 PAE -5 0 5 10 Frequency [GHz] MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5215 K-Band 2-Stage Power Amplifier AN EXAMPLE OF TEST CIRCUIT Vg1 Cb Vg2 Cb Vg1 RFin Vg2 RFout Vd1 R(Vd1) R(Vd2) GND Vd2 Cb Cb Vd1 Vd2 : Chip Condenser ( 39 pF ) Cb > 100F MITSUBISHI ELECTRIC as of July '98 |
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