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| 01/99 D-5 IFN146 Dual N-Channel Silicon Junction Field-Effect Transistor Low-Noise Audio Amplifier Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range - 40 V 10 mA 375 mW 3 mW/C - 65C to 200C At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Noise Figure Differential Gate Source Voltage gfs Ciss Crss NF |VGS1 - VGS2| IFN146 Min V(BR)GSS IGSS VGS(OFF) IDSS - 0.3 - 40 -1 -1 - 1.2 30 Typ Max Unit V nA A V mA Process NJ450 Test Conditions IG = - 1 A, VDS = OV VGS = - 30V, VDS = OV VGS = - 30V, VDS = OV VDS = 10V, ID = 1 A VDS = 10V, VGS = OV TA = 150C 30 40 75 15 1 20 mS pF pF dB mV VDS = 10V, VGS = OV IDSS = 5 mA VDS = 10V, VGS = OV VDS = 10V, ID = OA VDS = 10V, ID = 5 mA RG = 100 VDS = 10V, ID = 5 mA f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz TO71 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Gate, 3 Drain, 5 Source, 6 Gate, 7 Drain www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 |
Price & Availability of IFN146
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