![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Transistor 2SC0829 (2SC829) Silicon NPN epitaxial planar type Unit: mm For high-frequency amplification s Features 0.70.1 5.00.2 4.00.2 0.70.2 12.90.5 * Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios s Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 5 30 400 150 -55 to +150 Unit V V V mA mW C C 0.45+0.15 -0.1 2.5+0.6 -0.2 1 23 2.5+0.6 -0.2 0.45+0.15 -0.1 5.10.2 1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package s Electrical Characteristics Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio * Transition frequency Common emitter reverse transfer capacitance Reverse transfer impedance Note) *: hFE Rank classification Rank hFE B 70 to 160 C 110 to 250 Symbol VCBO VCEO VEBO hFE fT Cre Zrb Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 1 mA VCB = 10 V, IC = 1 mA, f = 200 MHz VCE = 10 V, IC = 1 mA, f = 10.7 MHz VCB = 10 V, IE = -1 mA, f = 2 MHz Min 30 20 5 70 150 230 1.3 1.6 60 250 MHz pF Typ Max Unit V V V Note) The part number in the parenthesis shows conventional part number. Publication date: March 2002 SJC00098BED 2.30.2 1 2SC0829 PC Ta 500 IC VCE 12 IB = 100 A Ta = 25C 60 IC VBE VCE = 10 V Collector power dissipation PC (mW) 400 10 50 Collector current IC (mA) Collector current IC (mA) 80 A 8 60 A 6 40 A 40 25C 30 Ta = 75C -25C 300 200 4 20 100 2 20 A 10 0 0 40 80 120 160 0 0 0 6 12 18 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IB VBE Collector to emitter saturation voltage VCE(sat) (V) 120 VCE = 10 V Ta = 25C 100 30 10 3 1 0.3 VCE(sat) IC IC / IB = 10 300 hFE IC VCE = 10 V 100 Forward current transfer ratio hFE 250 Ta = 75C 200 25C 150 -25C Base current IB (A) 80 60 40 Ta = 75C 25C -25C 100 0.1 0.03 0.01 0.1 20 50 0 0 0.4 0.8 1.2 1.6 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT I E 600 Ta = 25C 80 70 60 50 40 30 20 10 0 - 0.1 Zrb IE Common emitter reverse transfer capacitance Cre (pF) f = 2 MHz Ta = 25C Cre VCE 2.4 IC = 1 mA f = 10.7 MHz Ta = 25C Reverse transfer impedance Zrb () Transition frequency fT (MHz) 500 2.0 400 VCB = 10 V 6V 200 1.6 300 1.2 VCB = 6 V 10 V 0.8 100 0.4 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 - 0.3 -1 -3 -10 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 SJC00098BED 2SC0829 Cob VCB 1.6 bie gie 100 bre gre 0 Collector output capacitance Cob (pF) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 Reverse transfer susceptance bre (mS) IE = -1 mA f = 1 MHz Ta = 25C 12 yie = gie + jbie VCE = 10 V yre = gre + jbre VCE = 10 V - 0.5 f = 0.45 MHz 10.7 25 Input susceptance bie (mS) 8 58 -1.0 58 - 0.4 mA -1 mA -2 mA -4 mA 6 25 10.7 IE = - 0.4 mA -1 mA -2 mA -4 mA -7 mA f = 0.45 MHz -1.5 4 -2.0 2 -2.5 100 IE = -7 mA - 0.4 - 0.3 - 0.2 - 0.1 1 3 10 30 100 0 0 4 8 12 16 20 -3.0 - 0.5 0 Collector to base voltage VCB (V) Input conductance gie (mS) Reverse transfer conductance gre (mS) bfe gfe 0 boe goe 0.45 10.7 -4 mA 1.2 100 1.0 Forward transfer susceptance bfe (mS) -40 100 100 100 58 58 25 Output susceptance boe (mS) -20 - 0.1 mA - 0.4 mA 0.45 10.7 25 -1 mA 100 58 -2 mA 0.8 58 0.6 25 0.4 10.7 0.2 -7 mA -4 mA -2 mA -1 mA - 0.4 mA IE = - 0.1 mA 25 -60 58 IE = -7 mA f = 10.7 MHz -80 -100 yfe = gfe + jbfe VCE = 10 V 0 -120 f = 0.45 MHz 0 0.2 0.4 yoe = goe + jboe VCE = 10 V 0.6 0.8 1.0 0 20 40 60 80 100 Forward transfer conductance gfe (mS) Output conductance goe (mS) SJC00098BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
Price & Availability of 2SC0829
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |