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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.01.07 Page No. : 1/4 HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver. Absolute Maximum Ratings (Ta=25C) TO-252 * Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 C Junction Temperature ................................................................................................................ +150 C * Maximum Power Dissipation Total Power Dissipation (Tc=25C)................................................................................................. 10 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................................. -40 V BVCEO Collector to Emitter Voltage .............................................................................................. -30 V BVEBO Emitter to Base Voltage ...................................................................................................... -5 V IC Collector Current (DC)................................................................................................................. -3 A IC Collector Current (Pulse)............................................................................................................. -7 A IB Base Current (DC)................................................................................................................ -600 mA Thermal Characteristic Characteristic Thermal Resistance, junction to case Symbol Rjc Max. 12.5 Unit o C/W Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 30 100 Typ. -0.3 -1 80 55 Max. -1 -1 -0.5 -2 500 Unit V V V uA uA V V Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=-1MHz, IE=0 *Pulse Test: Pulse Width 380us, Duty Cycle2% MHz pF Classification Of hFE1 Rank Range Q 100-200 P 160-320 E 250-500 HJ772 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 125 C o Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.01.07 Page No. : 2/4 Saturation Voltage & Collector Current 10000 VCE(s at) @ IC=5IB 75 C o 25 C o Saturation Voltage (mV) 1000 75 C 100 o hFE 100 hFE @ VCE=2V 125 C 10 25 C o o 10 1 10 100 1000 10000 1 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=10IB Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=20IB Saturation Voltage (mV) Saturation Voltage (mV) 1000 75 C 100 125 C 10 o o 1000 75 C o o 25 C o 100 125 C o 25 C 10 1 1 10 100 1000 10000 1 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=40IB 1000 75 C o Saturation Voltage & Collector Current 10000 VBE(sat) @ IC=10IB Saturation Voltage (mV) Saturation Voltage (mV) 75 C 1000 25 C o o 100 125 C 25 C o o 10 125 C o 1 1 10 100 1000 10000 100 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) HJ772 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.01.07 Page No. : 3/4 Capacitance & Reverse-Biased Voltage 1000 1000 Cutoff Frequency & Collector Current 100 Cutoff Frequency (MHz).. . Capacitance (pF) 100 VCE=5V Cob 10 10 1 0.1 1 10 100 1 1 10 100 1000 Reverse-Biased Voltage (V) Collector Current (mA) Power Derating 1.6 1.4 10000 Safe Operating Area Pd(W), Power Dissipation Collector Current-IC (mA) 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 200 225 250 1000 PT=1ms PT=100ms PT=1s 100 10 1 1 10 100 Ta(C ), Ambient Temperature Forward Biased Voltage-VCE (V) HJ772 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-252 Dimension A C Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.01.07 Page No. : 4/4 Marking: H 772 Date Code J Rank Control Code B D L F G Style: Pin 1.Base 2.Collector 3.Emitter 3 H E K 2 I 1 J 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HJ772 HSMC Product Specification |
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