Part Number Hot Search : 
T28HC SZ180SM 1SMC17A M24C64 14583 AD9608 85T03G EH6004B
Product Description
Full Text Search
 

To Download 2SK2519-01 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 2SK2519-01
FAP-II Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Avalanche Proof
N-channel MOS-FET
200V
0,4
10A
40W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 200 200 10 40 30 40 150 -55 ~ +150 Unit V V A A V W C C
> Equivalent Circuit
- Electrical Characteristics (TC=25C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=200V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=150V ID=10A VGS=10V RGS=10 Tch=25C L = 100H IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C
Min. 200 2,5
Typ. 3,0 10 0,2 10 0,35 4,5 500 110 50 10 30 30 20 1,15 130 750
Max. 3,5 500 1,0 100 0,4 750 170 80 20 50 50 30 1,8
2,0
10
Unit V V A mA nA S pF pF pF ns ns ns ns A V ns nC
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case
Min.
Typ.
Max. 75,0 3,125
Unit C/W C/W
N-channel MOS-FET
200V
0,4
2SK2519-01
FAP-II Series
Drain-Source On-State Resistance
RDS(on) = f(Tch); ID=5A; VGS=10V
10A
40W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80s pulse test; TC=25C
Typical Transfer Characteristics
ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C
ID [A]
1
RDS(ON) []
2
ID [A]
3
VDS [V]
Tch [C]
VGS [V]
Typical Drain-Source On-State-Resistance
RDS(on)=f(ID); 80s pulse test; TC=25C
Typical Transconductance
gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C
Gate Threshold Voltage
VGS(th)=f(Tch); ID=1mA; VDS=VGS
RDS(ON) []
gfs [S]
5
VGS(th) [V]
4
6
ID [A]
ID [A]
Tch [C]
Typical Capacitances
C=f(VDS); VGS=0V; f=1MHz
Typical Gate Charge Characteristics
VGS=f(Qg); ID=10A
Forward Characteristics of Reverse Diode
IF=f(VSD); 80s pulse test Tch=25C; VGS=0V
C [nF]
VDS [V]
VGS [V]
IF [A]
7
8
9
VDS [V]
Qg [nC]
VSD [V]
Power Dissipation
PD=f(Tc)
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25C
Zth(ch-c) [K/W]
Transient Thermal impedance
Zthch-c=f(t) parameter:D=t/T
PD[W]
10
ID [A]
12
Tch [C]
VDS [V]
t [s]
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98


▲Up To Search▲   

 
Price & Availability of 2SK2519-01

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X