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  Datasheet File OCR Text:
 BLW77
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW77 is Designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band.
PACKAGE STYLE .500 4L FLG
FEATURES:
* PG = 12 dB min. at 15-30 W/1.6-28 MHz * Common Emitter * OmnigoldTM Metalization System
MAXIMUM RATINGS
IC VCB VCE PDISS TJ TSTG JC 12 A 70 V 35 V 245 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.71 C/W
1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICES hFE Cc GP d3 IC = 50 mA IE = 20 mA VE = 35 V VCE = 5.0 V VCB = 28 V
TC = 25 C
NONETEST CONDITIONS
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
35 70 4.0 20
UNITS
V V V mA --pF dB
IC = 7.0 A f = 1.0 MHz
15 225 12
80
VCE = 28 V PL = 15-30 W (PEP)
IC(ZS) = 0.1 A
f = 1.6-28 MHz
-30 37.5
dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


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Price & Availability of BLW77
Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
BLW77
974-BLW77
Advanced Semiconductor Inc RF Bipolar Transistors RF Transistor 1: USD61.65
10: USD56.05
25: USD54.18
50: USD52.31
100: USD50.44
BuyNow
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