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| Datasheet File OCR Text: |
| NE56787 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI NE56787 is Designed for general purpose and ultra linear small signal amplifier applications up to 4.0 GHz. PACKAGE STYLE .100 2L FEATURES INCLUDE: * Ideal for linear Class-A amplifiers MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG JC 60 mA 25 V 12 V 2.0 V 600 mW @ TA 75 C -65 C to +200 C -65 C to +200 C 40 C/W CHARACTERISTICS SYMBOL ICBO IEBO hFE COB fs VCB = 10 V TC = 25 C TEST CONDITIONS VEB = 1.0 V VCE = 10 V VCB = 10 V S21 = 0 dB 2 MINIMUM TYPICAL MAXIMUM 1.0 1.0 UNITS A A --pF GHz IC = 30 mA f = 1.0 MHz 30 100 0.44 200 0.80 7.5 8.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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