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RB050LA-30 Diodes Schottky barrier diode RB050LA-30 Applications General rectification Features 1) Small and Thin power mold type (PMDT) 2) Low IR 3) High reliability External dimensions (Unit : mm) 2.60.1 0.19 Land size figure 2.0 1.4 3.80.1 4.70.2 1.50.1 0.950.1 0.5 PMD ROHM : PMD 0.950.1 00.1 Structure Silicon Epitaxial Planer 0.19 Structure 0.2 0.3 Manufacture date Taping dimensions (Unit : mm) 4.00.1 2.00.05 8.00.1 1.550.1 0 1.750.05 0.250.05 1.4 5.50.05 1.550.05 2.80.05 8.00.1 1.250.1 Absolute maximum ratings (Ta=25C) Parameter Rever voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current * Forward cirremt surge peak (60Hz1cyc) Junction temperature Storage temperature Limits Symbol 30 VRM 30 VR 3 Io 70 IFSM 150 Tj -55 to +150 Tstg (*1)Tc=90max Mounted on epoxy board. 180Half sine wave 4.90.1 9.50.1 Unit V V A A Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.45 150 Unit V A Conditions IF=3.0A VR=30V 12.00.3 4.4 00.1 1/3 RB050LA-30 Diodes Electrical characteristic curves 10 Ta=75 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1000000 100000 10000 Ta=125 Ta=150 Ta=125 10000 f=1MHz 1 Ta=150 0.1 Ta=25 Ta=-25 Ta=75 1000 100 10 1 0.1 Ta=-25 Ta=25 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 100 0.01 0.001 0 100 200 300 400 500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600 0.01 0 5 10 15 20 25 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 30 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 440 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 430 420 410 400 390 AVE:414.1mV Ta=25 IF=3A n=30pcs 200 180 160 140 120 100 80 60 40 20 0 AVE:18.82uA 1050 Ta=25 VR=30V n=30pcs 1040 1030 1020 1010 1000 990 980 970 960 950 AVE:1012.1pF Ta=25 f=1MHz VR=0V n=10pcs VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 Ifsm 300 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 1cyc 8.3ms 25 20 15 10 AVE:12.3ns 5 0 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 250 200 150 100 50 0 1 Ifsm 8.3ms 8.3ms 1cyc AVE:214.0A 10 100 IFSM DISRESION MAP trr DISPERSION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 500 Ifsm t 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Mounted on epoxy board 3 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) PEAK SURGE FORWARD CURRENT:IFSM(A) 400 100 Rth(j-c) IM=100m IF=1A 2 D=1/2 Sin(180) 300 10 200 1 DC 1 1ms time 100 0 0.1 TIME:t(ms) IFSM-t CHARACTERISTICS 1 10 100 0.1 0.001 300us 0 1000 0 1 2 3 4 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 5 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 RB050LA-30 Diodes 3 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 7 6 0A 0V t D=1/2 T Io VR D=t/T VR=15V Tj=150 7 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V t DC D=1/2 T Io VR D=t/T VR=15V Tj=150 REVERSE POWER DISSIPATION:PR (W) 2 DC D=1/2 5 4 3 2 1 DC 5 4 3 2 1 1 Sin(180) Sin(180) 0 0 Sin(180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve (Io-Ta) 150 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve (Io-Tc) 150 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 30 25 20 15 10 5 0 AVE:14.6kV No break at 30kV ELECTROSTATIC DDISCHARGE TEST ESD(KV) C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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