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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6274/D High-Power NPN Silicon Transistors . . . designed for use in industrial-military power amplifer and switching circuit applications. * High Collector Emitter Sustaining -- VCEO(sus) = 100 Vdc (Min) -- 2N6274 VCEO(sus) = 120 Vdc (Min) -- 2N6275 VCEO(sus) = 150 Vdc (Min) -- 2N6277 * High DC Current Gain -- hFE = 30-120 @ IC = 20 Adc hFE = 10 (Min) @ IC = 50 Adc * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc * Fast Switching Times @ IC 20 Adc tr = 0.35 s (Max) ts = 0.8 s (Max) tf = 0.25 s (Max) * Complement to 2N6377-79 MAXIMUM RATINGS(1) Rating Collector-Base Voltage Emitter-Base Voltage 2N6274 2N6275 2N6277* *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 250 WATTS PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII III I III I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I II I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III III I I I I I I II II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I III I I II IIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIII IIIIII I IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I III I I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I III I III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIII Symbol VCB VCEO VEB IC IB PD 2N6274 120 100 2N6275 140 120 6.0 2N6277 180 150 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector Current -- Continuous Peak Base Current 50 100 20 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 250 1.43 Watts W/_C TJ, Tstg - 65 to + 200 CASE 197A-05 TO-204AE (TO-3) _C THERMAL CHARACTERISTIC Characteristic Symbol JC Max 0.7 Unit Thermal Resistance, Junction to Case (1) Indicates JEDEC Registered Data. 250 _C/W 200 150 100 50 0 0 25 50 100 125 150 75 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N6274 2N6275 2N6277 Fall Time (VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc) * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (2) fT = |hfe| * ftest *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS Storage Time (VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc) Rise Time (VCC = 80 Vdc, IC = 20 Adc, IB1 = 2.0 Adc, VBE(off) = 5.0 Vdc) Current-Gain Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Base-Emitter On Voltage (IC = 20 Adc, VCE = 4.0 Vdc) Base-Emitter Saturation Voltage IC = 20 Adc, IB = 2.0 Adc) IC = 50 Adc, IB = 10 Adc) Coliector-Emitter Saturation Voltage IC = 20 Adc, IB = 2.0 Adc) IC = 50 Adc, IB = 10 Adc) DC Current Gain IC = 1.0 Adc, VCE = 4.0 Vdc) IC = 20 Adc, VCE = 4.0 Vdc) IC = 50 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCB, VEB(off) = 1.5 Vdc) (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) (VCE = 75 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) IC = 50 mAdc, IB = 0) 2 - 18.5 V 30 s NOTE: For information of Figures 3 and 6 , RB and RC were NOTE: varied to obtain desired test conditions. + 21.5 V tr, tf 10 ns DUTY CYCLE = 0.5% t, TIME ( s) 0 Figure 2. Switching Time Test Circuit v Characteristic RB 10 OHMS 1N3879 - 4.0 V v VCC + 80 V RC 4.0 OHMS 0.02 0.5 0.03 0.07 0.05 2.0 0.1 0.3 0.2 1.0 0.7 0.5 2N6274 2N6275 2N6277 2N6274 2N6275 2N6277 tr @ VCC = 80 V Motorola Bipolar Power Transistor Device Data 0.7 1.0 td @ VBE(off) = 5.0 V VCEO(sus) VCE (sat) VBE(sat) VBE(on) Symbol 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) ICEO IEBO ICEX fT Cob hFE ts tr tf Min 100 120 150 30 50 30 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.25 0.80 0.35 Max -- 120 -- 600 100 1.8 1.8 3.5 1.0 3.0 10 1.0 50 50 50 -- -- -- -- Figure 3. Turn-On Time IC/IB = 10 TJ = 25C 20 30 pF s s s -- Adc mAdc Adc Adc MHz Unit Vdc Vdc Vdc Vdc 50 2N6274 2N6275 2N6277 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) JC(t) = r(t) JC JC = 0.7C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 4. Thermal Response 100 50 IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5 0.2 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) 2N6274 2N6275 CURVES APPLY BELOW 2N6277 RATED V(BR)CEO 50 70 100 3.0 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 200C dc 5.0 ms 1.0 ms 100 s 0.1 0.05 0.02 0.01 2.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v 200 Figure 5. Active-Region Safe Operating Area 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.5 0.7 1.0 tf @ VCC = 80 V ts IB1 = IB2 IC/IB = 10 TJ = 25C 10,000 7000 5000 C, CAPACITANCE (pF) 3000 2000 1000 700 500 300 200 Cib TJ = 25C t, TIME ( s) Cob 2.0 3.0 20 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 30 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 6. Turn-Off Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 2N6274 2N6275 2N6277 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 700 500 hFE, DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 TJ = 150C + 25C - 55C 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (AMPS) 5.0 10 IC = 2.0 A 5.0 A 10 A 30 A TJ = 25C VCE = 4.0 V VCE = 10 V Figure 8. DC Current Gain Figure 9. Collector Saturation Region TJ = 25C 2.4 V, VOLTAGE (VOLTS) 2.0 1.6 1.2 0.8 0.4 0 0.5 VBE(sat) @ IC/IB = 4.0 V VCE(sat) @ IC/IB = 10 10 20 30 50 VBE(sat) @ IC/IB = 10 V, TEMPERATURE COEFFICIENTS (mV/C) 2.8 + 12 + 10 + 8.0 + 6.0 + 4.0 + 2.0 *VC for VCE(sat) 0 - 2.0 0.5 0.7 VB for VBE 1.0 2.0 3.0 5.0 7.0 *APPLIES FOR IC/IB < hFE @ VCE 4 + 4.0 V - 55C TO + 25C + 25C TO + 150C 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages Figure 11. Temperature Coefficients 103 IC, COLLECTOR CURRENT (AMPS) 102 101 TJ = 150C 100C 25C 100 IC = ICES 10-1 REVERSE 10- 2 - 0.1 0 FORWARD + 0.1 + 0.2 + 0.3 + 0.4 VCE = 100 V IB , BASE CURRENT ( A) 102 TJ = 150C 101 100C VCE = 100 V 100 10-1 25C 10- 2 REVERSE 10-3 - 0.1 0 FORWARD + 0.1 + 0.2 + 0.3 + 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region Figure 13. Base Cut-off Region 4 Motorola Bipolar Power Transistor Device Data 2N6274 2N6275 2N6277 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K M 0.30 (0.012) L G 1 TQ M Y M -Y- H B -Q- 0.25 (0.010) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197A-05 TO-204AE ISSUE J Motorola Bipolar Power Transistor Device Data 5 2N6274 2N6275 2N6277 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N6274/D* 2N6274/D |
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