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2N3415
Discrete POWER & Signal Technologies
2N3415
E
CB
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
25 25 5.0 500 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N3415 625 5.0 83.3 200
Units
mW mW/C C/W C/W
(c) 1997 Fairchild Semiconductor Corporation
2N3415
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, I C = 0 VCB = 25 V, IE = 0 VCB = 25 V, IE = 0, TA = 100C VEB = 5.0 V, I C = 0 25 25 5.0 0.1 15 0.1 V V V A A A
ON CHARACTERISTICS*
hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE = 4.5 V, I C = 2.0 mA IC = 50 mA, IB = 3.0 mA IC = 50 mA, IB = 3.0 mA 0.6 180 540 0.3 1.3 V V
SMALL SIGNAL CHARACTERISTICS
hfe Small-Signal Current Gain IC = 2.0 mA, VCE = 4.5 V, f = 1.0 kHz 180
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

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Price & Availability of 2N3415

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3415 33C8244	NTE Electronics Inc	Transistor, Bipolar, Npn, 30V, 500Ma, To-92-3; Transistor Polarity:Npn; Collector Emitter Voltage Max:30V; Continuous Collector Current:500Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins Rohs Compliant: Yes \|Nte Electronics 2N3415		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3415 2368-2N3415-ND	NTE Electronics Inc	TRANS NPN 25V 0.5A TO92-3		0
2N3415 PBFREE 1514-2N3415PBFREE-ND	Central Semiconductor Corp	TRANS NPN 25V 0.5A TO92	2500: USD0.51562	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3415 2N3415	Central Semiconductor Corp	Transistor GP BJT NPN 25V 0.5A 3-Pin TO-92 Bulk - Boxed Product (Development Kits) (Alt: 2N3415)		0
2N3415 TRE PBFREE 2N3415 TRE PBFREE	Central Semiconductor Corp	Transistor GP BJT NPN 25V 0.5A 3-Pin TO-92 T/R - Tape and Reel (Alt: 2N3415 TRE PBFREE)	200000: USD0.4095 20000: USD0.4158 16000: USD0.4221 12000: USD0.4284 8000: USD0.43785 4000: USD0.4473 2000: USD0.45719	0
2N3415 APM TIN/LEAD 2N3415 APM TIN/LEA	Central Semiconductor Corp	Transistor GP BJT NPN 25V 0.5A 3-Pin TO-92 Ammo - Ammo Pack (Alt: 2N3415 APM TIN/LEA)	200000: USD0.47099 20000: USD0.47824 16000: USD0.48548 12000: USD0.49273 8000: USD0.5036 4000: USD0.51447 2000: USD0.52585	0
2N3415 TIN/LEAD 2N3415 TIN/LEAD	Central Semiconductor Corp	Transistor GP BJT NPN 25V 0.5A 3-Pin TO-92 Box - Boxed Product (Development Kits) (Alt: 2N3415 TIN/LEAD)		0
2N3415 TRA PBFREE 2N3415 TRA PBFREE	Central Semiconductor Corp	Transistor GP BJT NPN 25V 500mA 3-Pin Through Hole TO-92 T/R - Tape and Reel (Alt: 2N3415 TRA PBFREE)	200000: USD0.4862 20000: USD0.49368 16000: USD0.50116 12000: USD0.50864 8000: USD0.51986 4000: USD0.53108 2000: USD0.54283	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3415 PBFREE 610-2N3415	Central Semiconductor Corp	Bipolar Transistors - BJT NPN 25V 500mA BULK HFE/540	1: USD1.24 10: USD1.01 100: USD0.793 500: USD0.672 1000: USD0.542 2500: USD0.507 5000: USD0.506 10000: USD0.495	2126
2N3415 APM PBFREE 610-2N3415APM	Central Semiconductor Corp	Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch	2000: USD0.41 10000: USD0.394	0
2N3415 TRE PBFREE 610-2N3415TRE	Central Semiconductor Corp	Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch	2000: USD0.409	0
2N3415 TRE TIN/LEAD 610-2N3415TRETIN	Central Semiconductor Corp	Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch	2000: USD0.472 10000: USD0.453	0
2N3415 APM TIN/LEAD 610-2N3415APMTIN	Central Semiconductor Corp	Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch	2000: USD0.472 10000: USD0.453	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3415	Fairchild Semiconductor Corporation			349
2N3415	New Jersey Semiconductor Products, Inc.		730: USD0.9702 274: USD1.029 83: USD1.1025 24: USD1.8375 8: USD2.205 2: USD2.94	18122

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3415	New Jersey Semiconductor Products Inc	Bipolar Junction Transistor, NPN Type, TO-98	817: USD1.078 472: USD1.225 1: USD3.92	14497
2N3415	National Semiconductor Corporation	Bipolar Junction Transistor, NPN Type, TO-98	43: USD0.135 18: USD0.24 1: USD0.3	43

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3415 PBFREE 2N3415-CEN	Central Semiconductor Corp	Transistor: NPN; bipolar; 25V; 0.5A; 1.5W; TO92	25: USD0.86 5: USD0.9 1: USD1	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3415	General Electric Company	INSTOCK		1348

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3415	UNKNOWN	IN STOCK SHIP TODAY	1000: USD0.1 100: USD0.12 1: USD0.15	48

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