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2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393
Discrete POWER & Signal Technologies
2N3390 2N3391 2N3391A 2N3392 2N3393
B
C
TO-92
E
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
25 25 5.0 500 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N3390 / 3391/A / 3392 / 3393 625 5.0 83.3 200
Units
mW mW/C C/W C/W
(c) 1997 Fairchild Semiconductor Corporation
3390-93, Rev B
2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCB = 18 V, IE = 0 VEB = 5.0 V, IC = 0 25 25 5.0 100 100 V V V nA nA
ON CHARACTERISTICS*
hFE DC Current Gain VCE = 4.5 V, IC = 2.0 mA 2N3390 2N3391/A 2N3392 2N3393 400 250 150 90 800 500 300 180
SMALL SIGNAL CHARACTERISTICS
Cob hfe Output Capacitance Small-Signal Current Gain VCB = 10 V, f = 1.0 MHz IC = 2.0 mA, VCE = 4.5 V, f = 1.0 kHz 2N3390 2N3391/A 2N3392 2N3393 VCE = 4.5 V, IC = 100 A, RG = 500 , 2N3391A only BW = 15.7 kHz 2.0 400 250 150 90 10 1250 800 500 400 5.0 dB pF
NF
Noise Figure
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

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Price & Availability of 2N3390

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3390 33C8242	NTE Electronics Inc	Transistor Npn Silcion Bvceo=25V Ic=500Ma To-92 Case Hfe=400 To 800 General Purpose Amp And Switch \|Nte Electronics 2N3390		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3390 TIN/LEAD 2N3390 TIN/LEAD	Central Semiconductor Corp	Transistor GP BJT NPN 25V 500mA 3-Pin Through Hole TO-98 - Boxed Product (Development Kits) (Alt: 2N3390 TIN/LEAD)	250000: USD0.39468 25000: USD0.40075 20000: USD0.40682 15000: USD0.4129 10000: USD0.422 5000: USD0.43111 2500: USD0.44065	0
2N3390 PBFREE 2N3390 PBFREE	Central Semiconductor Corp	Transistor GP BJT NPN 25V 500mA 3-Pin Through Hole TO-98 - Boxed Product (Development Kits) (Alt: 2N3390 PBFREE)	250000: USD0.3432 25000: USD0.34848 20000: USD0.35376 15000: USD0.35904 10000: USD0.36696 5000: USD0.37488 2500: USD0.38317	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3390 PBFREE 610-2N3390	Central Semiconductor Corp	Bipolar Transistors - BJT NPN Transistor General Purpose	2500: USD0.344 10000: USD0.33	0
2N3390 TIN/LEAD 610-2N3390-TL	Central Semiconductor Corp	Bipolar Transistors - BJT NPN Transistor General Purpose	2500: USD0.396 10000: USD0.38	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3390	Genteq	Silicon NPN transistor - TO92 Package -	10: USD5.94 1: USD6.53	1

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3390	Fairchild Semiconductor Corporation			1

Part #	Manufacturer	Description	Price	BuyNow Qty.
2N3390	Genteq	Silicon NPN transistor - TO92 Package -	10: USD5.94 1: USD6.53	1

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