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| (R) STPS8L30B LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS LOW COST DEVICE WITH LOW DROP FORWARD VOLTAGE FOR LESS POWER DISSIPATION AND REDUCED HEATSINK OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH LEADS TO THE HIGHEST YIELD IN THE APPLICATIONS HIGH POWER SURFACE MOUNT MINIATURE PACKAGE DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequencyDC to DC converters. Packaged in DPAK, this device is especially intended for use as a Rectifier at the secondary of 3.3V SMPS or DC/DC units. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum junction temperature Critical rate of rise of reverse voltage Tc = 135C = 0.5 tp = 10 ms Sinusoidal tp = 2 s F = 1kHz square tp = 100s square Parameter Repetitive peak reverse voltage Value 30 7 8 75 1 2 - 65 to + 150 150 10000 Unit V A A A A A C C V/s 8A 30 V 150 C 0.40 V 4 3 2 4 (TAB) 2 1 NC 3 DPAK *: dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth(j-a) 1/4 October 1998 - Ed: 4A STPS8L30B THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter Value 2.5 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Tests Conditions Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% Min. Typ. 15 Max. 1 40 0.49 0.4 0.63 0.57 Unit mA V VR = VRRM IF = 8 A 0.35 IF = 16 A 0.48 To evaluate the maximum conduction losses use the following equation : P = 0.23 x IF(AV) + 0.021 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 5.0 4.0 3.0 2.0 T = 0.05 = 0.1 = 0.2 = 0.5 Fig. 2: Average forward current versus ambient temperature (=0.5). IF(av)(A) 9 8 7 6 Rth(j-a)=Rth(j-c) = 1 5 4 3 2 T Rth(j-a)=70C/W 1.0 IF(av) (A) 0.0 0 2 4 6 =tp/T tp 1 0 =tp/T tp Tamb(C) 50 75 100 125 150 8 10 0 25 2/4 STPS8L30B Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 120 100 80 Tc=25C Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 = 0.2 = 0.5 60 40 IM Tc=75C Tc=125C T 20 0 1E-3 t 0.2 = 0.1 =0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-4 Single pulse tp(s) 1E-3 1E-2 =tp/T tp 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 3E+2 1E+2 1E+1 1E+0 1E-1 1E-2 VR(V) 1E-3 0 5 10 15 20 25 30 Tj=25C Tj=150C Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 2000 F=1MHz Tj=25C Tj=125C 1000 500 200 VR(V) 100 1 10 40 Fig. 7: Forward voltage drop versus forward current (maximum values). Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) 100 IFM(A) 100.0 Typical values Tj=150C 80 60 Tj=125C 10.0 1.0 Tj=25C 40 20 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 2 4 6 S(Cu) (cm ) 8 10 12 14 16 18 20 3/4 STPS8L30B PACKAGE MECHANICAL DATA DPAK DIMENSIONS Millimeters Inches Min. A A1 A2 B B2 C C2 D E G H L2 L4 V2 FOOT PRINT DIMENSIONS (in millimeters) 6.7 REF. Typ. Max 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 Min. 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 Typ. Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.031 0.039 8 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.80 0.60 0 1.00 0.023 8 0 6.7 6.7 3 1.6 2.3 2.3 1.6 Ordering type STPS8L30B STPS8L30B-TR Marking STPS8L30B STPS8L30B Package DPAK DPAK Weight 0.3g 0.3g Base qty 75 2500 Delivery mode Tube Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 4/4 |
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