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Switching Diodes
MA3X158
Silicon epitaxial planar type
Unit : mm
For small power rectification and surge absorption
0.65 0.15
2.8
+ 0.2 - 0.3 + 0.25
1.5 - 0.05
0.65 0.15
0.95
2
1.1 - 0.1
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge voltage Output current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s
Symbol VR VRRM VRSM IF(AV) IFSM Tj Tstg
Rating 200 250 300 100 500 125 -55 to +125
Unit V V V mA mA C C
1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin)
Marking Symbol: M1C Internal Connection
1 3 2
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF VR = 200 V IF = 100 mA Conditions Min Typ Max 1.0 1.3 Unit A V
Note) Rated input/output frequency: 3 MHz
0 to 0.1
0.1 to 0.3 0.4 0.2
0.8
0.16 - 0.06
+ 0.2
I Absolute Maximum Ratings Ta = 25C
+ 0.1
0.4 - 0.05
* High reverse voltage VR * Large forward current IF(AV) * Small package and allowing automatic mounting
1.9 0.2
2.9 - 0.05
+ 0.2
1 3
0.95
+ 0.1
1.45
I Features
1
MA3X158
IF V F
102 Ta = 125C 10 75C - 20C 1
Switching Diodes
IR V R
10
1.2
VF Ta
1
1.0
Forward current IF (mA)
Reverse current IR (A)
25C
Forward voltage VF (V)
Ta = 125C
IF = 100 mA 0.8 10 mA 0.6 1 mA 0.4 0.1 mA
10-1 75C 10-2
10-1
10-2
10-3
25C
0.2
10-3
0
0.2
0.4
0.6
0.8
1.0
1.2
10-4
0
0
40
80
120
160
200
240
-40
0
40
80
120
160
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
IR T a
10
1
Reverse current IR (A)
VR = 200 V 10-1 100 V 10-2
10-3
10-4
-40
0
40
80
120
160
Ambient temperature Ta (C)
2

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