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| Silicon PIN Diodes BAR 60 BAR 61 q q RF switch RF attenuator for frequencies above 10 MHz Type BAR 60 Marking 60 Ordering Code (tape and reel) Q62702-A786 Pin Configuration Package1) SOT-143 BAR 61 61 Q62702-A120 Maximum Ratings per Diode Parameter Reverse voltage Forward current Total power dissipation, TS 65 C2) Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point 1) 2) Symbol VR IF Ptot Tj Tstg Top Values 100 140 250 150 - 55 ... + 150 - 55 ... + 150 Unit V mA mW C Rth JA Rth JS 580 340 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 07.94 BAR 60 BAR 61 Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC/AC Characteristics Reverse current VR = 50 V VR = 100 V Forward voltage IF = 100 mA Diode capacitance VR = 50 V, f = 1 MHz VR = 0, f = 100 MHz Zero bias conductance VR = 0, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA Differential forward resistance f = 100 MHz, IF = 0.01 mA IF = 0.1 mA IF = 1.0 mA IF = 10 mA IR - - VF CT - - gp L Values typ. max. Unit - - - 100 1 1.25 nA A - V pF 0.25 0.2 50 1 0.5 - - - S s - - rf - - - - 2800 380 45 7 - - - - Semiconductor Group 2 BAR 60 BAR 61 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Forward resistance rf = f (IF) f = 100 MHz Diode capacitance CT = f (VR) Semiconductor Group 3 BAR 60 BAR 61 Application circuit for attenuation networks with diode BAR 60 Application circuit for attenuation networks with diode BAR 61 Semiconductor Group 4 |
Price & Availability of BAR61
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