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| SI7810DN New Product Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES ID (A) 5.4 4.6 rDS(on) (W) 0.062 @ VGS = 10 V 0.084 @ VGS = 6 V D TrenchFETr Power MOSFET D New Low Thermal Resistance D PowerPAKt 1212-8 Package with Low 1.07-mm Profile D PWM Optimized APPLICATIONS D Primary Side Switch D In-Rush Current Limiter PowerPAKt 1212-8 D S 1 2 3 4 D 8 7 6 5 D D D S S G 3.30 mm 3.30 mm G S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 100 "20 5.4 Steady State Unit V 3.4 2.8 20 A 1.3 19 18 mJ 1.5 0.8 -55 to 150 W _C ID IDM IS IAS EAS 4.3 3.2 3.8 PD TJ, Tstg 2.0 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 70689 S-04559--Rev. A, 27-Aug-01 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 26 65 1.9 Maximum 33 81 2.4 Unit _C/W C/W 1 SI7810DN Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 5.4 A VGS = 6 V, ID = 4.6 A VDS = 15 V, ID = 5.4 A IS = 3.2 A, VGS = 0 V 20 0.052 0.070 12 0.78 1.2 0.062 0.084 S V 2 "100 1 5 V nA mA m A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 3.2 A, di/dt = 100 A/ms VDD = 50 V, RL = 50 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 50 V, VGS = 10 V, ID = 5.4 A 13.5 3 4.6 10 15 20 15 45 15 25 30 25 90 ns 17 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 7 V 16 I D - Drain Current (A) I D - Drain Current (A) 6V 16 20 Transfer Characteristics 12 12 8 5V 4 4V 0 0 1 2 3 4 5 8 TC = 125_C 4 25_C -55_C 0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 70689 S-04559--Rev. A, 27-Aug-01 SI7810DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.20 1000 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 0.16 C - Capacitance (pF) 800 Ciss 0.12 VGS = 6 V VGS = 10 V 0.04 600 0.08 400 Coss 200 Crss 0.00 0 4 8 12 16 20 0 0 20 40 60 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 50 V ID = 5.4 A 2.2 2.0 r DS(on) - On-Resistance (W) (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 2 4 6 8 10 12 14 0.4 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.4 A 8 6 4 2 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 0.16 20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.12 On-Resistance vs. Gate-to-Source Voltage ID = 5.4 A 0.08 TJ = 25_C 0.04 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 70689 S-04559--Rev. A, 27-Aug-01 www.vishay.com 3 SI7810DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) Power (W) -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 10 ID = 250 mA 40 50 Single Pulse Power, Juncion-To-Ambient 30 20 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 65_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 www.vishay.com 4 Document Number: 70689 S-04559--Rev. A, 27-Aug-01 |
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