| PART |
Description |
Maker |
| GS78108B-10 |
10ns 1M x 8 8Mb asynchronous SRAM
|
GSI Technology
|
| N08L63W2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
|
ON Semiconductor
|
| N08M163WL1A |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
| GS71216TP GS71216TP-10 GS71216TP-10I GS71216TP-8 G |
10ns 64K x 16 1Mb asynchronous SRAM
8ns 64K x 16 1Mb asynchronous SRAM
|
GSI[GSI Technology]
|
| IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns
JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 |
133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
| EPM7256AETC14410 EPM7128AETC100-10 EPM7064AETC |
IC,COMPLEX-EEPLD,256-CELL,10NS PROP DELAY,QFP,144PIN,PLASTIC
IC,COMPLEX-EEPLD,128-CELL,10NS PROP DELAY,TQFP,100PIN,PLASTIC
IC,COMPLEX-EEPLD,64-CELL,10NS PROP DELAY,TQFP,44PIN,PLASTIC
|
Altera
|
| EPM7512AEBC256-10 EPM7256AEFC100-10 |
COMPLEX-EEPLD,512-CELL,10NS PROP DELAY,BGA,256PIN,PLASTIC
COMPLEX-EEPLD,256-CELL,10NS PROP DELAY,BGA,100PIN,PLASTIC
|
Altera Corp
|
| RH1016 |
Precision 10ns Comparator
|
Linear Technology
|
| LT1016CN8 LT1016IN8 |
UltraFast Precision 10ns Comparator
|
Linear Technology
|
| LH540202-20 LH540202-15 LH540201U-35 LH540201U-25 |
x9 Asynchronous FIFO
From old datasheet system
FIFO,1KX9,ASYNCHRONOUS,CMOS,DIP,28PIN,PLASTIC
|
Sharp Corp
|
| IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
