PART |
Description |
Maker |
BC212 BC214 BC213 BC212B ON0141 BC214RL1 |
Amplifier Transistor PNP From old datasheet system CASE 29-4, STYLE 17 TO-2 (TO-26AA) Amlifier Transistors (PNP) 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 Amplifier Transistors(PNP Silicon) 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
MOTOROLA[Motorola, Inc] Motorola, Inc. Motorola Mobility Holdings, Inc. ON Semiconductor
|
BC307BRL1G |
Amplifier Transistors PNP Silicon 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226
|
ON Semiconductor
|
UNR9113J UNR9111J UNR911AJ UNR911DJ UN911EJ UNR911 |
Silicon PNP epitaxial planar type 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR Composite Device - Transistors with built-in Resistor
|
Panasonic, Corp.
|
MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MM |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB From old datasheet system PNP SILICON BIAS RESISTOR TRANSISTOR
|
MOTOROLA INC ONSEMI[ON Semiconductor]
|
FJN4312RTA |
PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
BC559BBU |
PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Bulk 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
NSBA123JF3T5G NSBA123TF3T5G NSBA143EF3T5G NSBA143Z |
BRT, PNP, 50 V, 100 mA, 100 k, none, SOT-1123 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR Digital Transistors (BRT)
|
ON Semiconductor
|
RN2967 RN2969 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Toshiba Semiconductor
|
RN2966FE RN2961FE RN2962FE RN2963FE RN2964FE RN296 |
100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
|
TOSHIBA[Toshiba Semiconductor]
|
BD526 BD530 BD528 BD530-5 BD528-5 BD526-5 |
PNP silicon annular amplifier transistor. 10 W, 60 V. PNP silicon annular amplifier transistor. 10 W, 80 V. PNP silicon annular amplifier transistor. 10 W, 100 V. PNP SILICON AMPLIFIER TRANSISTORS 进步党硅晶体管放大器
|
MOTOROLA[Motorola, Inc] Motorola Inc Motorola Mobility Holdings, Inc.
|
FJV4101RMTF |
PNP Epitaxial Silicon Transistor; Package: SOT-23; No of Pins: 3; Container: Tape & Reel 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Fairchild Semiconductor, Corp.
|
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