PART |
Description |
Maker |
WXC |
Bipolar Process
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List of Unclassifed Man...
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MIC4452BM MIC4452BN MIC4452CT MIC4451 MIC4451BM MI |
12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
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MICREL[Micrel Semiconductor]
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MIC4421A MIC4421AAM MIC4421ABM MIC4421ABN MIC4421A |
High peak-output current: 9A Peak (typ.) 9A Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
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MIC GROUP RECTIFIERS Micrel Semiconductor
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MIC442305 MIC4424 MIC4424CWM MIC4423CN MIC4425 MIC |
Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process IC DRIVER MOSFET 3A DUAL 8-SOIC
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Micrel Semiconductor MIC GROUP RECTIFIERS http:// MICREL INC
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MIC4421 MIC4421BM MIC4421BN MIC4421CM MIC4421CN MI |
9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process 9 A BUF OR INV BASED MOSFET DRIVER, PDSO8 FPGA - 100000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 9 A BUF OR INV BASED MOSFET DRIVER, PDIP8 FPGA - 100000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 9 A BUF OR INV BASED MOSFET DRIVER, PSFM5 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process 9 A BUF OR INV BASED MOSFET DRIVER, PDIP8
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MICREL INC MICREL[Micrel Semiconductor] Micrel Semiconductor, Inc.
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RN4603 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
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Toshiba Semiconductor
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IRF3205LTRR IRF3205S IRF3205STRR |
75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA Advanced Process Technology Advanced Process Technology
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International Rectifier
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STRS6707 STR-S6707 STR-S6708 STR-S6709 TRS6707 STR |
OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电5A,输出功率直20W50V输出,带双极开关晶体管的脱线开关稳压器) Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电2A,输出功率直20W50V输出,带双极开关晶体管的脱线开关稳压器) RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
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ALLEGRO[Allegro MicroSystems] Allegro MicroSystems, Inc.
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TA84002F TA84002FG |
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP 东芝双极线性集成电路多芯片 PWM CHOPPER TYPE 2−PHASE BIPOLAR STEPPING MOTOR DRIVER PWM CHOPPER TYPE 2 .PHASE BIPOLAR STEPPING MOTOR DRIVER
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Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
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8230-90-RC 8230-94-RC 8230-78-RC 8230-76-RC 8230-5 |
Inductor; Series:8230; Inductance:820uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:3.8MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:100nH; Inductance Tolerance: /- 10 %; Q Factor:40; Self Resonant Frequency:690MHz; Core Material:Phenolic; Leaded Process Compatible:Yes 1 ELEMENT, 0.1 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:270uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:8MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:220uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:9MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:39uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:22MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:15uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:35MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:18uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:32MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:27uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:22MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:2.7uH; Inductance Tolerance: /- 10 %; Q Factor:37; Self Resonant Frequency:100MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 2.7 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:560nH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:300MHz; Core Material:Phenolic; Leaded Process Compatible:Yes 1 ELEMENT, 0.56 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:6.8uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:60MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 6.8 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:1.5uH; Inductance Tolerance: /- 10 %; Q Factor:28; Self Resonant Frequency:140MHz; Core Material:Iron; Leaded Process Compatible:Yes Inductor; Series:8230; Inductance:4.7uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:75MHz; Core Material:Iron; Leaded Process Compatible:Yes Inductor; Series:8230; Inductance:3.3uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:90MHz; Core Material:Iron; Leaded Process Compatible:Yes
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Bourns, Inc. BOURNS INC
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82S129 N82S126A N82S126N N82S129A N82S129N 82S126 |
V(cc): 7.0V; V(in): 5.5V; ; 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc. 1K BIT TTL BIPOLAR PROM
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PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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ZTX601A ZTX600Z ZTX600AZ ZTX600BZ ZTX601B |
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600B(Z) Discrete - Bipolar Transistors - Darlington Transistors - ZTX600A(Z) Discrete - Bipolar Transistors - Darlington Transistors - ZTX600(Z) NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
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Diodes List of Unclassifed Manufacturers
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