| PART |
Description |
Maker |
| M368L3223FTN-CB3LAA M368L1624FTM-CB3AA M381L6423FT |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC 184pin缓冲模块，基56Mb的F -死去64/72-bit非ECC / ECC
|
Sanken Electric Co.,Ltd.
Sanken Electric Co., Ltd.
|
| M378T2953BGZ0-CD5_CC M378T2953BGZ3-CD5_CC M378T335 |
240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M381L6423ETM-LC5 M368L3223ETM-CC5 M368L3223ETM-LC5 |
184pin Unbuffered Module based on 256Mb E-die 64/72-bit ECC/Non ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M381L6523DUM-LCC M368L2923DUN-CB3 M368L2923DUN-CCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| PC28F00AP30TFA PC28F00BP30EFA |
Numonyx? Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit
|
Micron Technology
|
| NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| V23849-R35-C55 V23849-R36-C55 |
Transceivers by Form-factor MSA - iSFP? 1.25 Gbit/s GBE; 4.25/2.125/1.0625 Gbit/s FC, 850 nm; MM; LC; common ground sheme
Transceivers by Form-factor MSA - iSFP? 1.25 Gbit/s GBE; 4.25/2.125/1.0625 Gbit/s FC, 850 nm; MM; LC; separated ground sheme
|
Infineon
|
| S34MS16G2 |
16 Gb, 4-Bit ECC, ×8 I/O, and 1.8 V VCC NAND Flash for Embedded
|
Cypress Semiconductor
|
