PART |
Description |
Maker |
AFT09MS015N AFT09MS015NT1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
STI360N4F6 STP360N4F6 |
N-channel 40 V, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package High avalanche ruggedness
|
ST Microelectronics STMicroelectronics
|
STL8N6LF6AG |
High avalanche ruggedness
|
STMicroelectronics
|
STB80N4F6AG |
High avalanche ruggedness
|
STMicroelectronics
|
STF24N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
IPL65R650C6S |
Very high commutation ruggedness
|
Infineon Technologies A...
|
STP80N6F6 |
High avalanche ruggedness
|
STMicroelectronics
|
IPL60R1K5C6S |
Very high commutation ruggedness
|
Infineon Technologies A...
|
IPL60R210P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
IPA50R500CE IPA50R500CE-15 |
Very high commutation ruggedness
|
Infineon Technologies A...
|