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IIRFB3307 - N-Channel MOSFET Transistor

IIRFB3307_8960505.PDF Datasheet


Part No.	IIRFB3307
Description	N-Channel MOSFET Transistor
File Size	332.34K / 2 Page
Maker	Inchange Semiconductor ...
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Full text search : N-Channel MOSFET Transistor

Product Description search : N-Channel MOSFET Transistor

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PART	Description	Maker
FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX	TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 6A I(D) \| TO-252AA TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| TO-252AA TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 6A I(D) \| TO-220AB TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 6A I(D) \| TO-263AB TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 6A I(D) \| TO-247VAR TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| SOT-186 TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| TO-263AB TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| TO-220AB TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| TO-247VAR TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 6A I(D) \| SOT-186 TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| TO-252AA 晶体管\| MOSFET的\| P通道\| 100V的五（巴西）直\| 20A条（丁）\|52AA TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 3A I(D) \| TO-220AB 晶体管\| MOSFET的\| P通道\| 150伏五（巴西）直\| 3A条（丁）\| TO - 220AB现有	Cooper Bussmann, Inc.
IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| TO-247 TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 5A I(D) \| TO-205AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 5A I(D) \| TO-205AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 5A I(D) \| TO-220AB TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 31A I(D) \| TO-247 TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 6A I(D) \| TO-205AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| TO-205AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 8A I(D) \| TO-205AF 晶体管\| MOSFET的\| N沟道\| 80V的五（巴西）直\| 8A条（丁）\|05AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 4.9A I(D) \| TO-220AB 晶体管\| MOSFET的\| N沟道\| 100V的五（巴西）直\| 4.9AI（四）\| TO - 220AB现有 TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 1A I(D) \| TO-250VAR 晶体管\| MOSFET的\| N沟道\| 100V的五（巴西）直\| 1A条（丁）\|50VAR TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 28A I(D) \| TO-204AE 晶体管\| MOSFET的\| N沟道\| 80V的五（巴西）直\| 28A条（丁）\|04AE TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 600MA I(D) \| TO-250VAR 晶体管\| MOSFET的\| N沟道\| 150伏五（巴西）直\| 600毫安（丁）\|50VAR TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 25A I(D) \| TO-204AE 晶体管\| MOSFET的\| N沟道\| 100V的五（巴西）直\|5A条（丁）\|04AE	Black Box, Corp. Bourns, Inc. Vishay Intertechnology, Inc. Samsung Semiconductor Co., Ltd. 3M Company
NDT014 NDT014J23Z	N-Channel Enhancement Mode Field Effect Transistor.7A0V.2ΩN沟道增强型场效应管（漏电.7A, 漏源电压60V，导通电.2Ω 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 2.7A I(D) \| SOT-223	Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation
FDS6961AZ FDS6961AZL86Z FDS6961AZL99Z	3.5 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SO-8 TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 30V V(BR)DSS \| 3.5A I(D) \| SO Dual N-Channel Logic Level PowerTrench MOSFET	Fairchild Semiconductor, Corp.
2SK1547 2SK947 2SK903	MOSFET Transistor TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,12A I(D),TO-220AB TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,4A I(D),TO-220	Fuji Electric Fuji Semiconductors, Inc.
2SK2432 2SK2619 2SK2636 2SK2403 2SJ454 2SK2404 2SK	Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 7A I(D) TRANSISTOR \| MOSFET \| P-CHANNEL \| 250V V(BR)DSS \| 5A I(D) TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 5A I(D) TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 16A I(D) 晶体管\| MOSFET的\| N沟道\| 250V五（巴西）直\| 16A条（丁） TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 6A I(D) \| TO-262AA 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 6A条（丁）\|62AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 20A I(D) 晶体管\| MOSFET的\| N沟道\| 450V五（巴西）直\| 20A条（丁） Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset	Sanyo Electric Co., Ltd.
STB10NA40 STB10NA40-1 STB10NA40T4	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 10A I(D) \| TO-263AB TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 10A I(D) \| TO-262VAR N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR	STMICROELECTRONICS[STMicroelectronics]
BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135	8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) 150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	Infineon Technologies AG SIEMENS AG SIEMENS A G
IRLC130 IRFC214R IRFC9014R IRFC254R IRFC054R IRFC2	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| CHIP TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| CHIP TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| CHIP TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| CHIP 晶体管\| MOSFET的\| N沟道\| 100V的五（巴西）决策支持系统\|芯片 TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| CHIP 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）决策支持系统\|芯片 TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| CHIP 晶体管\| MOSFET的\| N沟道\| 400V五（巴西）决策支持系统\|芯片 TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| CHIP 晶体管\| MOSFET的\| P通道\| 100V的五（巴西）决策支持系统\|芯片 TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| CHIP 晶体管\| MOSFET的\| P通道\| 200伏五（巴西）决策支持系统\|芯片	ITT, Corp. Amphenol, Corp. ZETTLER electronics GmbH Electronic Theatre Controls, Inc.
BUZ103SL-4	Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28	Siemens Semiconductor Group SIEMENS AG Infineon Technologies AG
BUZ101SL-4	Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET	http:// Siemens Semiconductor Group Infineon Technologies AG SIEMENS AG

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