| PART |
Description |
Maker |
| OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 8A条一（c）|1
|
Vicor, Corp.
Marktech Optoelectronics
|
| PBSS5350SS PBSS4350SPN PBSS4350SS PBSS5350SS115 |
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd 2700 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
Philips Semiconductors
NXP[NXP Semiconductors]
|
| PBSS5160DS PBSS5160DS115 PBSS5160DS-15 |
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| BC212 BC214 BC213 BC212B ON0141 BC214RL1 |
Amplifier Transistor PNP
From old datasheet system
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
Amlifier Transistors (PNP) 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Amplifier Transistors(PNP Silicon) 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
ON Semiconductor
|
| PUMB1 PEMB1 |
PNP-PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 22 kOhm PNP-PNP配电阻型晶体管，R1=22千欧姆，R2=22千欧
PNP/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
PNP/PNP resistor-equipped transistors; R1 = 22 k楼?, R2 = 22 k楼?
|
NXP Semiconductors N.V.
|
| PMBT3906YS PMBT3906YS115 |
40 V, 200 mA PNP/PNP general-purpose double transistor
40 V, 200 mA PNP-PNP general-purpose double transistor
40 V, 200 mA PNP/PNP general-purpose double transistor; Package: SOT363 (SC-88); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| AP1043 AP1044 AP1141 AP1057 AP1103 AP1137 |
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-111
Power inductor, 10/20% tol, SMT, RoHS
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 5A I(C) | TO-5 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 5A条一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-5
|
Electronic Theatre Controls, Inc.
|
| Q62702-F1063 BFT93 |
PNP Silicon RF Transistor for broadba...
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
http://
|
| 2SA1009 2SA1009A 2SA1009AH 2SA1009AM 2SA1009J 2SA1 |
PNP SILICON POWER TRANSISTORS 进步党硅功率晶体
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
2 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-220AB
TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 2A I(C) | TO-220AB
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-220AB
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| TN6728A NZT6728 NZT6728L99Z |
1200 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP General Purpose Amplifier
|
Unisonic Technologies Co., Ltd.
FAIRCHILD[Fairchild Semiconductor]
|
| 2SB1197-R 2SB1197 2SB1197-P 2SB1197-Q |
PNP Silicon Epitaxial Transistors 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
|
