| PART |
Description |
Maker |
| XN0A312G |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)
|
Panasonic
|
| MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| MT3S06U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| KTX401U |
EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| KTX411TY KTX411T KTX411TGR |
EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
|
KEC[KEC(Korea Electronics)]
|
| XN09D58 |
Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD)
|
Panasonic Semiconductor
|
| DZ2J180M0L |
Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type
|
Panasonic Battery Group
|
| DZ2J068M0L |
Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type
|
Panasonic Semiconductor
|
