| PART |
Description |
Maker |
| SIGC07T60NC |
IGBTs - HV Chips - SIGC07T60NC, 600V, 6A
|
Infineon
|
| SIGC121T120R2CS |
IGBTs - HV Chips - SIGC121T120R2CS, 1200V, 75A
|
Infineon
|
| SIGC156T120R2CS |
IGBTs - HV Chips - SIGC156T120R2CS, 1200V, 100A
|
Infineon
|
| SIGC223T120R2CL |
IGBTs - HV Chips - SIGC223T120R2CL, 1200V, 150A
|
Infineon
|
| SIGC223T120R2CS |
IGBTs - HV Chips - SIGC223T120R2CS, 1200V, 150A
|
Infineon
|
| SIGC109T120R3 |
IGBTs - HV Chips - SIGC109T120R3, 1200V, 100A
|
Infineon
|
| Q67041-S2856-A001 Q67041-S2856-A002 SIGC18T60SNC S |
IGBTs - HV Chips - SIGC18T60SNC, 600V, 20A
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| IRGP430U |
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier, Corp.
|
| BM-10EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
5X7 DOT MATRIX DISPLAY, HIGH EFFICIENCY RED/YELLOW GREEN, 30.48 mm
|
BRIGHT LED ELECTRONICS CORP
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| BM-41EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
