PART |
Description |
Maker |
GS81302TT07 |
144Mb SigmaDDRTM-II Burst of 2 SRAM
|
GSI Technology
|
GS81302DT19AGD-450 GS81302DT19AGD-450I GS81302DT19 |
144Mb SigmaQuad-II TM Burst of 4 SRAM JEDEC-standard pinout and package
|
GSI Technology
|
GS820E32A GS820E32AQ-4 GS820E32AQ-6I GS820E32AT-6I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM 117MHz 11ns 64K x 32 2M synchronous burst SRAM 64K x 32 / 2M Synchronous Burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
|
GS88118 GS88136 GS88118GT-11IT GS88118GT-11.5IT GS |
512K x 18, 256K x 36 ByteSafe?/a> 8Mb Sync Burst SRAMs 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs 512K x 18, 256K x 36 ByteSafe8Mb Sync Burst SRAMs 8Mb锛?12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M浣??512K x 18浣??ByteSafe??????RAM锛?甫2浣???插?????板?锛? 512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100 512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100 8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位(256K x 36位)ByteSafe同步静态RAM(带2位脉冲地址计数器)) 8Mb12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位(512K x 18位)ByteSafe同步静态RAM(带2位脉冲地址计数器))
|
GSI Technology, Inc.
|
M36L0R8060T1ZAQE M36L0R8060T1ZAQF M36L0R8060T1ZAQT |
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM 12ns 256K x 18 4Mb sync burst SRAM 8.5ns 256K x 18 4Mb sync burst SRAM 8ns 256K x 18 4Mb sync burst SRAM 10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
CY7C1303AV25-100BZC CY7C1306AV25-100BZC CY7C1303AV |
Memory : Sync SRAMs 18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR Architecture 18-Mb Burst of 2 Pipelined SRAM with QDR?/a> Architecture
|
Cypress Semiconductor
|
EDI2DL32256V EDI2DL32256V35BC EDI2DL32256V40BC EDI |
TMS320C6202. TMS320C6203. TMS320C6204. TMS320C6 Families x32 Fast Synchronous SRAM 256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,4.0ns,256Kx32同步流水线脉冲静态RAM) 256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.5ns,256Kx32同步流水线脉冲静态RAM) 256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.8ns,256Kx32同步流水线脉冲静态RAM)
|
WEDC[White Electronic Designs Corporation]
|
MT45W2MW16B MT45W2MW16BFB |
(MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory (MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory
|
Micron Semiconductor
|
WED2ZL361MV50BC WED2ZL361MV38BC WED2ZL361MV42BC WE |
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,5.0纳秒同步脉冲流水线静态随机存储器(无总线等待时间)) 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.8纳秒同步脉冲流水线静态随机存储器(无总线等待时间)) 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,4.2纳秒同步脉冲流水线静态随机存储器(无总线等待时间)) 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.5纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
|
Vicor, Corp.
|