PART |
Description |
Maker |
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
2N3439CSM401 2N3440CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR
|
Seme LAB
|
NCP1027 NCP1027P100G NCP1027P065G |
HIGH−VOLTAGE SWITCHER FOR MEDIUM POWER OFFLINE SMPS FEATURING LOW STANDBY POWER
|
ON Semiconductor ONSEMI
|
FS3UM-10 FS3UM |
Power MOSFETs: FS Series, Medium Voltage, 500V Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
|
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS HIGH SPEED MEDIUM POWER NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS HIGH SPEED/ MEDIUM POWER/ NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS Supercapacitor; Capacitance:0.68F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
|
Central Semiconductor Corp SEME-LAB[Seme LAB] TT electronics Semelab Limited
|
ZXTP558L ZXTP558LSTZ |
400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR
|
Diodes Incorporated
|
RM15TA-24 RM15TA-2H |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
BCP54-10 BCP56-10 BCP56 |
NPN Medium Power Transistor High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
|
TY Semicondutor TY Semiconductor Co., Ltd
|
FXT757 |
PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
|
ZETEX[Zetex Semiconductors]
|
FCX658A |
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
|
Zetex Semiconductors
|