| PART |
Description |
Maker |
| IGC136T170S8RH2 |
low switching losses and saturation losses
|
Infineon Technologies A...
|
| IRGB4060DPBF IRGB4060DPBF-15 |
Low Switching Losses
|
International Rectifier
|
| IRGB4064DPBF-15 |
Low Switching Losses
|
International Rectifier
|
| IRG7PH28UD1PBF IRG7PH28UD1MPBF IRG7PH28UD1PBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
Low switching losses
|
International Rectifier
|
| IKQ50N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IKY40N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IKY50N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| MKP1839 |
C-values 1000 pF - 10 μF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL
|
Vishay
|
| IKW30N65EL5 |
Best-in-Class tradeoff between conduction and switching losses
|
Infineon Technologies A...
|
| SPD06N60C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
