PART |
Description |
Maker |
BFP540FESD |
NPN Silicon RF Transisto NPN硅射频Transisto
|
INFINEON[Infineon Technologies AG]
|
D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS From old datasheet system
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] http://
|
PMD11K80 PMD11K PMD11K100 PMD11K60 PMD10K80 PMD10K |
Silicon Power Darlington Transistors SILICON POWER DARLING TRANSISTORSl 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
|
Central Semiconductor C... CENTRAL[Central Semiconductor Corp] Central Semiconductor Corp. Central Semiconductor, Corp.
|
1N2439 1N1399 1N3296 1N2431 1N2433 1N2434 1N2435 R |
Silicon Power Rectifier 125 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AA Silicon Power Rectifier 125 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AA Silicon Power Rectifier 100 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA Silicon Power Rectifier 100 A, 200 V, SILICON, RECTIFIER DIODE, DO-205AA Silicon Power Rectifier
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
BD675 BD679A BD677A BD677 ON0196 BD675A BD679 BD67 |
From old datasheet system 4.0 AMPERE POWER TRANSISTORS Plastic Medium-Power Silicon NPN Darlingtons DARLINGTON POWER TRANSISTORS NPN SILICON
|
MOTOROLA[Motorola, Inc] ON Semiconductor Motorola Inc Motorola, Inc.
|
BD433 BD435 BD436 BD438 4127 BD437 BD434 -BD437 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??) From old datasheet system COMPLEMENTARY SILICON POWER TRANSISTORS Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
STMICROELECTRONICS[STMicroelectronics] 意法半导
|
2SB805 2SB806 2SB806-T1 2SB805-T2 2SB805-T1 2SB806 |
Low frequency power amplification Silicon transistor PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC[NEC]
|
MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道 TOSHIBA Intelligent Power Module Silicon N Channel IGBT Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4 Silicon Power Rectifier Diode / 12 Amp Silicon Power Rectifier Diode 12 Amp Silicon Power Rectifier Diode, 12 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
|
NTE[NTE Electronics]
|
2SD2163 |
Silicon power transistor NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
|
NEC
|
ASIS50-28 |
NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator HF BAND, Si, NPN, RF POWER TRANSISTOR
|
ASI[Advanced Semiconductor] Advanced Semiconductor, Inc. ADVANCED SEMICONDUCTOR INC
|
2SK947 2SK947-MR |
N-CHANNLEL SILICON POWER MOSFET 12 A, 250 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-CHANNLEL SILICON POWER MOSFET - CHANNLEL硅功率MOSFET
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|