| PART |
Description |
Maker |
| BUY25CS45B-01 |
HiRel RadHard Power-MOS
|
Infineon Technologies A...
|
| BXY42-T1 BXY42 BXY42-T BXY42-T1H |
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor PIN Diode for high speed switching of RF signals)
Publications, Books
From old datasheet system
SILICON, PIN DIODE
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
|
| CLY29-10 CLY29 CLY29-00 CLY29-05 |
HiRel C-Band GaAs Power-MESFET
SMT CAP 10NF 50V 10% CERAMIC 0805
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| APT8058HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 13.5A 0.580 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT1201R6 APT1201R6B APT1201R6BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 8A 1.600 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT5014B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 37A 0.140 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT5010JVRU3 |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT10086BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT5010JVFR |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10086BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
