| PART |
Description |
Maker |
| HAT2028R-EL-E HAT2028RJ-EL-E HAT2028R-15 |
4 A, 60 V, 0.16 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| BD809 BD810 BD809-D |
POWER TRANSISTORS PNP SILICON
Plastic High Power Silicon Transistor
Plastic High Power Silicon PNP Transistor
|
Motorola, Inc
ON Semiconductor
|
| GI751 GI756 GI750 GI752 GI758 GI754 |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 470uF; Voltage: 63V; Case Size: 12.5x25 mm; Packaging: Bulk
High Voltage Plastic Rectifier(高压塑胶整流
HIGH CURRENT PLASTIC RECTIFIER
|
GE Security, Inc.
GE[General Semiconductor]
|
| CJD3439 |
NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS NPN硅塑料高压功率晶体管
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
|
| HAT1023R-EL-E HAT1023R |
7 A, 20 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOSFET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| U74LVC2G86L-S08-T U74LVC2G86L-S08-R U74LVC2G86G-S0 |
This device has power-down protective circuit, preventing device destruction when it is powered down.
Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.
|
Unisonic Technologies
|
| ACT-PS512K8W-012L2I ACT-PS512K8Y-017L2T ACT-PS512K |
High speed 4 Megabit plastic monolithic SRAM. Options burn-in. Speed 12ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 17ns.
High speed 4 Megabit plastic monolithic SRAM. Options none. Speed 10ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle. Speed 15ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 25ns.
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 20ns.
|
Aeroflex Circuit Technology
|
| GL100MN3MP GL100MN3MP1 |
1.6 mm, 1 ELEMENT, INFRARED LED, 940 nm ROHS COMPLIANT, PLASTIC, SMD, 2 PIN
Surface Mount Type, High Power
|
Sharp Electronics, Corp.
Sharp Electrionic Components
|
| 2N5655 2N5656 2N5657 |
Power 1A 350V NPN
POWER TRANSISTORS NPN SILICON
Plastic NPN Silicon High-Voltage Power Transistor
|
ONSEMI[ON Semiconductor]
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| EP7312NBSP EP7312-IV-90 EP7312 EP7312-CB-90 EP7312 |
HIGH-PERFORMANCE, LOW-POWER SYSTEM ON CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE
IC,AUDIO PROCESSOR,CMOS,BGA,204PIN,PLASTIC
|
CIRRUS[Cirrus Logic]
Cirrus Logic, Inc.
|
