| PART |
Description |
Maker |
| TGA2583-15 |
2.7 3.7GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
| T1G6001032-SM-15 T1G6001032-SM-EVB1 |
10W, 32V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TDA7497 |
10W 10W 10W/15W TRIPLE AMPLIFIER
10 10W STEREO AMPLIFIER WITH MUTE/ST-BY
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| TDA7269SA |
10W 10W STEREO AMPLIFIER WITH MUTE & ST-BY
|
意法半导
|
| TDA7297SA |
10W 10W DUAL BRIDGE AMPLIFIER
|
STMicroelectronics
|
| TDA7269SA |
10W+10W STEREO AMPLIFIER WITH MUTE & ST-BY
|
STMicroelectronics
|
| SY87724L SY87724LH1 |
3.3V AnyRateTM MUX/DEMUX Up to 2.7GHz
From old datasheet system
3.3V AnyRate MUX/DEMUX Up to 2.7GHz
|
MICREL[Micrel Semiconductor]
Micrel Semiconductor,Inc.
|
| EIB1718-2P |
17.7-18.7GHz, Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIB1718-2P |
17.7-18.7GHz, 2W internally matched power FET
|
Excelics Semiconductor
|
