PART |
Description |
Maker |
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
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NXP Semiconductors N.V.
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BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
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NXP Semiconductors N.V.
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BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
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BLP15M7160P-15 |
Power LDMOS transistor
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NXP Semiconductors
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L88016-14 |
RF POWER LDMOS TRANSISTOR
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Polyfet RF Devices
|
LP702-14 |
RF POWER LDMOS TRANSISTOR
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Polyfet RF Devices
|
BLF7G22L-100P |
Power LDMOS transistor
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NXP Semiconductors
|
BLF7G21LS-160 |
Power LDMOS transistor
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NXP Semiconductors
|
BLF7G20L-200 |
Power LDMOS transistor
|
Philips Semiconductors
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BLF7G15LS-200 |
Power LDMOS transistor
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NXP Semiconductors N.V.
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