PART |
Description |
Maker |
MRF1507 MRF1507T1 |
LATERAL NCHANNEL BROADBAND RF POWER MOSFET
|
MOTOROLA[Motorola, Inc]
|
IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条? TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier] International Rectifier, Corp.
|
FDFMA2N028Z08 FDFMA2N028Z |
20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟 Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
|
Fairchild Semiconductor
|
FDC638APZ |
-20V P-Channel 2.5V PowerTrenchSpecified MOSFET P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm
|
FAIRCHILD[Fairchild Semiconductor]
|
MTP33N10E |
SPP Power NChannel
|
ON Semiconductor
|
ZXMN2B14FHTA ZXMN2B14FH |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY 20V SOT23 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
STS4DPFS2LS |
P-CHANNEL 20V - 0.06ohm - 4A SO-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER P-CHANNEL 20V - 0.06ohm - 4A SO-8 STripFETMOSFET PLUS SCHOTTKY RECTIFIER P-CHANNEL 20V - 0.06ohm - 4A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER P-CHANNEL 20V 0.06 OHM 4A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIER
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package 80V Single N-Channel HEXFET Power MOSFET in a SO-8 package -40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package 20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET 30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET -12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM 1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32 x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp. Advanced Micro Devices, Inc. Spansion, Inc.
|
NTP27N06 NTB27N06 NTB27N06T4 |
Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK LASER MOD 670NM .95MW MVP ROUND LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|