| PART |
Description |
Maker |
| STB45NF06 |
N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFETPOWER MOSFET N沟道60V 0.022ohm - 38A条采用D2PAK STripFET⑩功率MOSFET
N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFET⑩ POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFET POWER MOSFET
N-CHANNEL 60V 0.022OHM 38A D2PAK STRIPFET POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FQA62N25C |
250V N-Channel MOSFET 62 A, 250 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
|
| 2N6764 |
N-Channel Power MOSFETs/ 38A/ 60V/100V
|
Fairchild Semiconductor
|
| STD38NH02L -STD38NH02L |
N-CHANNEL 24V - 0.011 ohm - 38A DPAK/IPAK STripFET??III POWER MOSFET
N-CHANNEL 24V - 0.011 ohm - 38A DPAK/IPAK STripFET III POWER MOSFET
N-CHANNEL 24V - 0.011 ohm - 38A DPAK/IPAK STripFET⑩ III POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| FQI9N25C FQB9N25C FQB9N25CTM FQI9N25CTU |
250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET 8.8 A, 250 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFW624B IRFI624B IRFW624BTMFP001 |
250V N-Channel B-FET / Substitute of IRFW624A
250V N-Channel MOSFET 4.1 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| APT6015LVR |
POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT6015LVFR |
POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| IRHG8214 2071 IRHG3214 IRHG4214 IRHG7214 IRHG8214N |
250V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
0.5 A, 250 V, 2.4 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB
250V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
250V Quad N-Channel MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE
From old datasheet system
|
IRF[International Rectifier]
http://
|
| EN8586A 2SJ661-12 EN8586 |
P-Channel Power MOSFET, -60V, -38A, 39mOhm, TO-262-3L/TO-263-2L
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| IRFP244B IRFP244BFP001 |
250V N-Channel B-FET / Substitute of IRFP244 & IRFP244A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
