| PART |
Description |
Maker |
| APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT20M38SVR APT20M38SVRG |
200V 67A 0.038W
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| BUK444-60H |
PowerMOS transistor
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 330uF; Voltage: 200V; Case Size: 18x35.5 mm; Packaging: Bulk 21 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4
TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB
TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50
FUSE 1A FA SMT 1206
TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五（DRM）的| 300口（T）的有效值|00VAR50
TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五（DRM）的| 150A口（T）的有效值|00AB
TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五（DRM）的| 300口（T）的有效值|培训基金，一辆M23
TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五（DRM）的|0A口（T）的有效值|培训基金- M12
TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五（DRM）的| 50A条口（T）的有效值|08VARM8
|
Cornell Dubilier Electronics, Inc.
EPCOS AG
SIEMENS AG
|
| IRF240 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
HEXFET?TRANSISTORS 200V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
|
IRF[International Rectifier]
|
| HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723 |
40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT
|
http://
FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
|
| FQA32N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
| IRF610B IRF610BFP001 |
200V N-Channel B-FET / Substitute of IRF610 & IRF610A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STD20NF10 STD20NF10T4 |
N-CHANNEL 100V - 0.038 OHM - 30A IPAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET
N-CHANNEL 100V - 0.038 OHM - 30A IPAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET
N-CHANNEL 100V - 0.038 ohm - 25A IPAK/DPAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N-CHANNEL 100V - 0.038 ohm - 25A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL MOSFET
|
STMicroelectronics
ST Microelectronics
|
| IRF650 IRF650B IRFS650B IRF650BFP001 |
200V N-Channel B-FET / Substitute of IRF650A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQE10N20C FQE10N20CTU |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
