PART |
Description |
Maker |
MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. Transistors
|
Usha India Ltd.
|
SMBTA1407 |
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage
|
http://
|
PC895 PC875 PC865 |
From old datasheet system High Sensitivity, Low Collector Dark Current, High Collector-emitter Voltage Type Photocoupler
|
SHARP[Sharp Electrionic Components]
|
BCX79-IX BCX79-VII BCX79-VIII BCX79-X Q62702-C718 |
From old datasheet system PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 RES,SMC,681,0HM,1/4W/1%,1 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 自动对焦进步党硅晶体管(高电流增益低集电极发射极饱和电压
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
KCP56-16 |
Low collector-emitter saturation voltage
|
TY Semiconductor Co., Ltd
|
DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
2SB1202 |
Low collector-to-emitter saturation voltage. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
2SD1621 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|