PART |
Description |
Maker |
NGB8202N NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK 20 A, 400 V, N-Channel D2PAK 20 A, 400 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
IRF320-323 IRF321 IRF322 IRF323 IRF320 IRF720 IRF7 |
N-Channel Power MOSFETs, 3.0 A, 350-400 V N沟道功率MOSFET.0甲,350-400 V TRI N PLUG M 0-48 N-Channel Power MOSFETs/ 3.0 A/ 350-400 V
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] http://
|
QIP0640001 |
Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts) 400 A, 600 V, N-CHANNEL IGBT
|
Littelfuse, Inc. POWEREX[Powerex Power Semiconductors]
|
FDMS9600S08 FDMS9600S FDMS9600S-08 |
30V Dual N-Channel PowerTrenchMOSFET Dual N-Channel PowerTrench? MOSFET Dual N-Channel PowerTrench㈢ MOSFET Dual N-Channel PowerTrench庐 MOSFET
|
Fairchild Semiconductor
|
OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6D package 400V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6E package 1000V Dual N-Channel MOSFET in a S-6E package SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6 400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier Electronic Theatre Controls, Inc. Atmel, Corp.
|
P4KE11 P4KE10 P4KE100 P4KE20 P4KE27 P4KE33 P4KE180 |
400 Watt Transient Voltage Suppressors 6.8 to 400 Volts 400 Watt Transient Voltage Suppressors 6.8 to 400 Volts 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
|
Micro Commercial Compon... MCC[Micro Commercial Components] Micro Commercial Components, Corp.
|
GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS 5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
RJK4013DPE09 RJK4013DPE-00-J3 RJK4013DPE-09 |
Silicon N Channel MOS FET High Speed Power Switching 17 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK-3
|
Renesas Electronics Corporation Renesas Electronics, Corp.
|
GT10G101 |
10 A, 400 V, N-CHANNEL IGBT
|
|
AM55-0024RTR AM55-0024TR |
100-400 MHz, Hi dyn range 2 channel IF amplifier with power control Hi Dyn Range 2 Channel IF Amp with Power Control, 100 - 400 MHz Hi Dyn Range 2 Channel IF Amp with Power Control/ 100 - 400 MHz
|
MA-Com Tyco Electronics
|
FQU5N40TU |
400V N-Channel QFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 3.4 A, 400 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
Fairchild Semiconductor, Corp.
|
|