PART |
Description |
Maker |
1202-054 |
FLTR, SING, PI, BSHG
|
API Technologies Corp
|
1202-052 |
FLTR, SING, PI, BSHG
|
API Technologies Corp
|
IMP525 |
Sing Single Cell Batt le Cell Batterery Powered Electroluminescent Lamp Driv er/Inverter(单节电池供电的电致发光(EL)灯驱动反相
|
IMP
|
VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system Power Factor Correction Modules: MOSFET
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IRFB4710PBF IRFS4710PBF IRFSL4710PBF IRFS4710TRR I |
High frequency DC-DC converters HEXFET㈢ Power MOSFET HEXFET? Power MOSFET 75 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
|
IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A) HEXFET? Power MOSFET 500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
IRLL024N IRLL024NPBF IRLL024NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package HEXFET Power MOSFET(HEXFET 功率MOS场效应管) HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??) 4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
IRF[International Rectifier]
|
MH32S64APHB-8 MH32S64APHB-6 MH32S64APHB-7 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五(巴西)直| 36A条(丁)|63AB HEXFET? Power MOSFET Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A) 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp. http:// IRF[International Rectifier]
|
NID9N05CL NID9N05CLT4 NID9N05CLT4G |
Power MOSFET Power MOSFET 9 Amps, 52 Volts N-Channel, Logic Level(9 A, 52V?昏??靛钩锛???????MOSFET) Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package
|
ON Semiconductor
|
IXTA10N60P IXTP10N60P IXTI10N60P |
MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PolarHV Power MOSFET
|
Infineon Technologies AG IXYS CORP IXYS Corporation
|
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