| PART |
Description |
Maker |
| M5M5256DFP-70LLI M5M5256DVP-55LL M5M5256DFP-70XL M |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
Memory>Low Power SRAM
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
|
| M5M5256DP-45LL M5M5256DP-45XL M5M5256DP-55LL M5M52 |
262144-BIT CMOS STATIC RAM
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-PDIP -40 to 85 262144位（32768 - Word位）的CMOS静态RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M5256CP-55LL M5M5256CP-55XL M5M5256CP-70LL M5M52 |
262144-bit (32768 x 8-bit) CMOS static RAM, 55ns
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
262144-bit (32768 x 8-bit) CMOS static RAM, 70ns
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LC35256DM LC35256DT-10 LC35256DT-70 LC35256D-10 25 |
x8 SRAM
Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| W24LH8S-55LI W24LH8 W24LH8Q-55LE W24LH8Q-55LI W24L |
Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits 32K X 8 STANDARD SRAM, 100 ns, PDSO28
|
Winbond Electronics, Corp.
WINBOND[Winbond]
|
| TC57256AD TC57256D-70 TC57256D-85 TC57257P |
32768 x 8-Bit CMOS UV Erasable and Electrically Programmable ROM
|
Toshiba
|
| BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
|
BRILLIANCE SEMICONDUCTOR INC
BRILLIANCE SEMICONDUCTOR, Inc.
Brilliance Semiconducto...
|
| M5M5V32R16J-12 M5M5V32R16J-10 M5M5V32R16J-15 M5M5V |
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
524288-BIT CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
ETC[ETC]
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Alliance Semiconductor ...
|
| LC36256AMLL-12W LC36256AMLL-85W LC36256AMLL-70W |
256K (32768 words x 8 bits ) SRAM
|
SANYO
|
| UPD4416016G5-A15-9JF UPD4416016G5-A17-9JF UPD44160 |
1M X 16 STANDARD SRAM, 15 ns, PDSO54
CONNECTOR ACCESSORY
16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
|
NEC Corp.
NEC[NEC]
|
| UPD444001 UPD444001LE-11 UPD444001LE-10 UPD444001L |
4M X 1 STANDARD SRAM, 11 ns, PDSO32
4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT 4分位CMOS SRAM的快速分1
|
NEC Corp.
NEC, Corp.
|
