| PART |
Description |
Maker |
| IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET
technology, Ultra Low On-Resistance, P-Channel MOSFET
generation v technology
|
International Rectifier
|
| IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| IRF7507PBF IRF7507TRPBF IRF7507PBF-15 |
Generation V Technology
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
Ultra Low On-Resistance
|
International Rectifier
|
| IDT8T49N008I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IRLMS6702 IRLMS6702TR |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| IRF9952PBF IRF9952TRPBF |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| IRF7306 IRF7306TR IRF7306TRPBF |
Generation V Technology
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| IRF7201 IRF7201PBF IRF7201TR |
Generation V Technology
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP20N60 SGP20N6009 SGW20N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
