PART |
Description |
Maker |
HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB 43A/ 1200V/ NPT Series N-Channel IGBT 43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IXGH15N120B2D1 IXGT15N120B2D1 |
HiPerFAST IGBT 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD 30 A, 1200 V, N-CHANNEL IGBT, TO-268AA
|
IXYS Corporation
|
APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
HGTP1N120BN HGTD1N120BNS HGTD1N120BNS9A |
5.3A, 1200V, NPT Series N-Channel IGBT 5.3A, 1200V, NPT Series N-Channel IGBT 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
CM50DY-24H |
Dual IGBTMOD 50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc. Powerex Power Semiconductors
|
CM50DU-24F |
Trench Gate Design Dual IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
MII75-12A3 MDI75-12A3 MID75-12A3 |
IGBT Modules - Short Circuit SOA Capability Square RBSOA 90 A, 1200 V, N-CHANNEL IGBT IGBT Modules: Boost Configurated IGBT Modules
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXGN50N120C3H1 |
High-Speed PT IGBT for 20-50 kHz Switching 95 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
|
DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
1MBC03-120 |
Fuji Discrete Package IGBT 5 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Fuji Electric Holdings Co., Ltd. http://
|