PART |
Description |
Maker |
5400BL15B200 |
5400 MHz Balun
|
Johanson Technology Inc.
|
2400DP39A5425 |
2450 / 5400 MHz Diplexer ( BPF / BPF)
|
Johanson Technology Inc.
|
TCD2560D |
IMAGE SENSOR-CCD, 4-6V, RECTANGULAR, THROUGH HOLE MOUNT TOSHIBA CCD Image Sensor CCD (charge coupled device) The TCD2560D is a high sensitive and low dark current 5400 elements 3 line CCD color image sensor which includes CCD drive circuit and clamp circuit.
|
TOSHIBA[Toshiba Semiconductor]
|
MCP3204-BISL MCP3204-CIST MCP3204-CIP MCP3204-BIP |
2.7V 4-Channel/8-Channel 12-Bit A/D Converters with SPI Serial Interface 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口 TWIST-LOK 2.93,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口 CBS SCREW-MOUNT NYLON 3/4,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口 TWIST-LOK 2.68,1 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口 400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN 2.7 4-Channel/8-Channel 12位A / D转换器具有SPI串行接口
|
Microchip Technology Inc. Microchip Technology, Inc.
|
HBAT-5400 HBAT-5400-BLK HBAT-5402 HBAT-5402-BLK HB |
High Performance Schottky Diode for Transient Suppression HBAT-5402 · Clipping/clamping diode HBAT-5400 · Clipping/clamping diode HBAT-540C · Clipping/clamping diode HBAT-540B · Clipping/clamping diode
|
http:// HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
FW905 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device 7 A, 20 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device SANYO SEMICONDUCTOR CO LTD
|
FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
FDD8426H |
40V Dual N & P-Channel PowerTrenchMOSFET Dual N & P-Channel PowerTrench垄莽 MOSFET N-Channel: 40 V, 12 A, 12 m楼? P-Channel: -40 V, -10 A, 17 m楼? Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
|
Fairchild Semiconductor
|
PHN210T |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
|
FDS8936S |
Dual N-Channel Enhancement Mode Field Effect Transistor 5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
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