PART |
Description |
Maker |
HD155121F |
RF Transceiver IC for GSM and PCN Dual band cellular systems
|
HITACHI[Hitachi Semiconductor]
|
MC13760 |
GSM/DCS/TDMA/AMPS Multi-Protocol Transceiver
|
Motorola, Inc
|
UAA3536HN |
Low power GSM/DCS/PCS multi-band transceiver
|
Philips
|
SKY74046 SKY74045 |
Power Amplifier Controller for Quad-Band GSM, GPRS, and EDGE Applications RF Transceiver with EDGE Transmit Support for Quad-Band GSM, GPRS, and EDGE Applications
|
Skyworks Solutions
|
MRF5S9101NBR1 MRF5S9101NR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
MW5IC2030 |
GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
|
Motorola
|
SI4205-BM E-GSM900 GSM850 SI4205-BMR DCS1800 |
TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, BGA32 8 X 8 MM, LGA-32 Single 8x8 mm package CMOS process technology Intergrated GSM/GPRS transceiver including
|
Silicon Laboratories, Inc.
|
MRF18030ASR3 MRF18030ALSR3 MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
MRF18030BLSR3 MRF18030BSR3 MRF18030BR3 MRF18030BLR |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
AD6528 |
GSM/GPRS Digital Baseband Processor For Smartphone and Wireless Handheld Devices AD6528 GSM/GPRS SoftFonebaseband processor
|
Analog Devices
|
MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc. MOTOROLA[Motorola Inc] Freescale (Motorola)
|
MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc] Motorola, Inc.
|